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Researcher profile

Jens Martin

Jens Martin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-con

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Published work

6 published item(s)

preprint2014arXiv

Transport properties of monolayer MoS$_2$ grown by chemical vapour deposition

Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS$_2$. The devices show low temperature mobilities up to 500 cm$^2$V$^{-1}$s$^{-1}$ and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show, that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of phonons as a limiting factor of these devices is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gate Defined Quantum Confinement in Suspended Bilayer Graphene

Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder severely limit device functionality. Here we present a technique that builds quantum confined structures in suspended bilayer graphene with tunnel barriers defined by external electric fields that break layer inversion symmetry, thereby eliminating both edge and substrate disorder. We report clean quantum dot formation in two regimes: at zero magnetic field B using the single particle energy gap induced by a perpendicular electric field and at B > 0 using the quantum Hall ferromagnet ν = 0 gap for confinement. Coulomb blockade oscillations exhibit periodicity consistent with electrostatic simulations based on local top gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates single electron transport with high device quality and access to vibrational modes, enabling broad applications from electromechanical sensors to quantum bits.

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preprint2010arXiv

Coulomb-driven broken-symmetry states in doubly gated suspended bilayer graphene

The non-interacting energy spectrum of graphene and its bilayer counterpart consists of multiple degeneracies owing to the inherent spin, valley and layer symmetries. Interactions among charge carriers are expected to spontaneously break these symmetries, leading to gapped ordered states. In the quantum Hall regime these states are predicted to be ferromagnetic in nature whereby the system becomes spin polarized, layer polarized or both. In bilayer graphene, due to its parabolic dispersion, interaction-induced symmetry breaking is already expected at zero magnetic field. In this work, the underlying order of the various broken-symmetry states is investigated in bilayer graphene that is suspended between top and bottom gate electrodes. By controllably breaking the spin and sublattice symmetries we are able to deduce the order parameter of the various quantum Hall ferromagnetic states. At small carrier densities, we identify for the first time three distinct broken symmetry states, one of which is consistent with either spontaneously broken time-reversal symmetry or spontaneously broken rotational symmetry.

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preprint2010arXiv

Local Compressibility Measurements of Correlated States in Suspended Bilayer Graphene

Bilayer graphene has attracted considerable interest due to the important role played by many-body effects, particularly at low energies. Here we report local compressibility measurements of a suspended graphene bilayer. We find that the energy gaps at filling factors v = 4 do not vanish at low fields, but instead merge into an incompressible region near the charge neutrality point at zero electric and magnetic field. These results indicate the existence of a zero-field ordered state and are consistent with the formation of either an anomalous quantum Hall state or a nematic phase with broken rotational symmetry. At higher fields, we measure the intrinsic energy gaps of broken-symmetry states at v = 0, 1 and 2, and find that they scale linearly with magnetic field, yet another manifestation of the strong Coulomb interactions in bilayer graphene.

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preprint2010arXiv

Self-aligned nanoscale SQUID on a tip

A nanometer-sized superconducting quantum interference device (nanoSQUID) is fabricated on the apex of a sharp quartz tip and integrated into a scanning SQUID microscope. A simple self-aligned fabrication method results in nanoSQUIDs with diameters down to 100 nm with no lithographic processing. An aluminum nanoSQUID with an effective area of 0.034 $μ$m$^2$ displays flux sensitivity of 1.8$\cdot 10^{-6}$ $Φ_0/\mathrm{Hz}^{1/2} and operates in fields as high as 0.6 T. With projected spin sensitivity of 65 $μ_B/\mathrm{Hz}^{1/2}$ and high bandwidth, the SQUID on a tip is a highly promising probe for nanoscale magnetic imaging and spectroscopy.

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preprint2009arXiv

Broken symmetry states and divergent resistance in suspended bilayer graphene

Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise from various sources such as ripples [3] or charged impurities [4]. Recent improvements in quality have been achieved by suspending graphene flakes [5,6], yielding samples with very high mobilities and little charge inhomogeneity. Here we report the fabrication of suspended bilayer graphene devices with very little disorder. We observe fully developed quantized Hall states at magnetic fields of 0.2 T, as well as broken symmetry states at intermediate filling factors $ν= 0$, $\pm 1$, $\pm 2$ and $\pm 3$. The devices exhibit extremely high resistance in the $ν= 0$ state that grows with magnetic field and scales as magnetic field divided by temperature. This resistance is predominantly affected by the perpendicular component of the applied field, indicating that the broken symmetry states arise from many-body interactions.

0 citations0 reviewsNo code linkedOpen access