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Researcher profile

Jens Baringhaus

Jens Baringhaus contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2016arXiv

Electron interference in ballistic graphene nanoconstrictions

We have realized nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The transmissions of Fabry-Perot like resonances were probed by in-situ transport measurements at various temperatures. The energies of the resonances are determined by the size of the constrictions which can be controlled precisely using STM lithography. The temperature and size dependence of the measured conductances are in quantitative agreement with tight-binding calculations. The fact that these interference effects are visible even at room temperature makes the reported devices attractive as building blocks for future carbon based electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro steps evolving during graphene growth. A more advantageous type of sub-nanometer stepped graphene layers is obtained with a new method: a high-temperature conditioning of the SiC surface in argon atmosphere. The results can be explained by the observed graphene buffer layer domains after the conditioning process which suppress giant step bunching and graphene step flow growth. The superior electronic quality is demonstrated by a less extrinsic resistance anisotropy obtained in nano-probe transport experiments and by the excellent quantization of the Hall resistance in low-temperature magneto-transport measurements. The quantum Hall resistance agrees with the nominal value (half of the von Klitzing constant) within a standard deviation of 4.5*10(-9) which qualifies this method for the fabrication of electrical quantum standards.

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preprint2013arXiv

Exceptional ballistic transport in epitaxial graphene nanoribbons

Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons were thought to be semiconductors with these properties, however efforts to produce ribbons with useful bandgaps and high mobility has had limited success. We show here that high quality epitaxial graphene nanoribbons 40 nm in width, with annealed edges, grown on sidewall SiC are not semiconductors, but single channel room temperature ballistic conductors for lengths up to at least 16 micrometers. Mobilities exceeding one million corresponding to a sheet resistance below 1 Ohm have been observed, thereby surpassing two dimensional graphene by 3 orders of magnitude and theoretical predictions for perfect graphene by more than a factor of 10. The graphene ribbons behave as electronic waveguides or quantum dots. We show that transport in these ribbons is dominated by two components of the ground state transverse waveguide mode, one that is ballistic and temperature independent, and a second thermally activated component that appears to be ballistic at room temperature and insulating at cryogenic temperatures. At room temperature the resistance of both components abruptly increases with increasing length, one at a length of 160 nm and the other at 16 micrometers. These properties appear to be related to the lowest energy quantum states in the charge neutral ribbons. Since epitaxial graphene nanoribbons are readily produced by the thousands, their room temperature ballistic transport properties can be used in advanced nanoelectronics as well.

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preprint2013arXiv

Graphene Grown on Ge(001) from Atomic Source

Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800°C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2 kOhm/sq. Activation energy of surface roughness is low (about 0.66 eV) and constant throughout the range of temperatures in which graphene is formed. Density functional theory calculations indicate that the major physical processes affecting the growth are: (1) substitution of Ge in surface dimers by C, (2) interaction between C clusters and Ge monomers, and (3) formation of chemical bonds between graphene edge and Ge(001), and that the processes 1 and 2 are surpassed by CH$_{2}$ surface diffusion when the C atoms are delivered from CH$_{4}$. The results of this study indicate that graphene can be produced directly at the active region of the transistor in a process compatible with the Si technology.

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preprint2013arXiv

Local transport measurements on epitaxial graphene

Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport measurements. The systematic variation of probe spacings and substrate temperature has clearly revealed two-dimensional transport regimes of Anderson localization as well as of diffusive transport. The detailed analysis of the temperature dependent data demonstrates that the local on-top nano-sized contacts do not induce significant strain to the epitaxial graphene films.

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