Researcher profile

Jeevak Parpia

Jeevak Parpia contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2013arXiv

Study of superfluid $^3$He under nanoscale confinement. A new approach to the investigation of superfluid $^3$He films

We review recent experiments in which superfluid $^3$He has been studied under highly controlled confinement in nanofluidic sample chambers. We discuss the experimental challenges and their resolution. These methods open the way to a systematic investigation of the superfluidity of $^3$He films, and the surface and edge excitations of topological superfluids.

preprint2010arXiv

Strong gate coupling of high-Q nanomechanical resonators

The detection of mechanical vibrations near the quantum limit is a formidable challenge since the displacement becomes vanishingly small when the number of phonon quanta tends towards zero. An interesting setup for on-chip nanomechanical resonators is that of coupling them to electrical microwave cavities for detection and manipulation. Here we show how to achieve a large cavity coupling energy of up to (2 π) 1 MHz/nm for metallic beam resonators at tens of MHz. We used focused ion beam (FIB) cutting to produce uniform slits down to 10 nm, separating patterned resonators from their gate electrodes, in suspended aluminum films. We measured the thermomechanical vibrations down to a temperature of 25 mK, and we obtained a low number of about twenty phonons at the equilibrium bath temperature. The mechanical properties of Al were excellent after FIB cutting and we recorded a quality factor of Q ~ 3 x 10^5 for a 67 MHz resonator at a temperature of 25 mK. Between 0.2K and 2K we find that the dissipation is linearly proportional to the temperature.

preprint2010arXiv

Tuning mechanical modes and influence of charge screening in nanowire resonators

We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of the resonant frequency with DC gate voltage (VgDC). The effect of electronic screening on the properties of the resonator can be seen in the amplitude. We observe the mixing of mechanical modes with VgDC. We also experimentally probe and quantitatively explain the hysteretic non-linear properties, as a function of VgDC, of the resonator using the Duffing equation.