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Jean-Yves Duquesne

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cond-mat.mtrl-sci

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preprint2023arXiv

Impact of Spin Wave Dispersion on Surface Acoustic Wave Velocity

The dependence of the velocity of surface acoustic wave (SAW) as a function of an external applied magnetic field is investigated in a Fe thin film epitaxially grown on a piezoelectric GaAs substrate. The SAW velocity is observed to strongly depend on both the amplitude and direction of the magnetic field. To interpret the experimental data a phenomenological approach to the relative change in SAW velocity is implemented. We find that the experimental velocity variation can be well reproduced provided that the spin wave dispersion is taken into account. The validity of this phenomenological model is attested by the comparison with a quasi-exact magnetoelastic one.

preprint2016arXiv

Strong reduction of the coercivity by a surface acoustic wave in an out-of-plane magnetized epilayer

Inverse magnetostriction is the effect by which magnetization can be changed upon application of stress/strain. A strain modulation may be created electrically by exciting interdigitated transducers to generate surface acoustic waves (SAWs). Hence SAWs appear as a possible route towards induction-free undulatory magnetic data manipulation. Here we demonstrate experimentally on an out-of-plane magnetostrictive layer a reduction of the coercive field of up to 60$\%$ by a SAW, over millimetric distances. A simple model shows that this spectacular effect can be partly explained by the periodic lowering of the strain-dependent domain nucleation energy by the SAW. This proof of concept was done on (Ga,Mn)(As,P), a magnetic semiconductor in which the out-of-plane magnetic anisotropy can be made very weak by epitaxial growth; it should guide material engineering for all-acoustic magnetization switching.

preprint2014arXiv

Surface acoustic wave driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers

Interdigitated transducers were used to generate and detect surface acoustic waves on a thin layer of (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute magnetic semiconductor is very sensitive to the strain of the layer, making it an ideal test material for the dynamic control of magnetization via magneto-striction. The time-domain measurement of the amplitude and phase of the transmitted SAW during magnetic field sweeps indicated a clear resonant behavior at a field close to the one calculated to give a precession frequency equal to the SAW frequency. A resonance was observed from 5K to 85K, just below the Curie temperature of the layer. A full analytical treatment of the coupled magnetization/acoustic dynamics showed that the magneto-strictive coupling modifies the elastic constants of the material and accordingly the wave-vector solution to the elastic wave equation. The shape and position of the resonance were well reproduced by the calculations, in particular the fact that velocity (phase) variations resonated at lower fields than the acoustic attenuation variations.

preprint2013arXiv

Irreversible magnetization switching using surface acoustic waves

An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magnetic anisotropy parameters through inverse magneto-striction, which triggers precession, and eventually reversal. Using the micromagnetic parameters of a fully characterized layer of the magnetic semiconductor (Ga,Mn)(As,P), we then show that there is a large window of accessible experimental conditions (SAW amplitude/wave-vector, field amplitude/orientation) allowing irreversible switching. As this is a resonant process, the influence of the detuning of the SAW frequency to the magnetic system's eigenfrequency is also explored. Finally, another - non-resonant - switching mechanism is briefly contemplated, and found to be applicable to (Ga,Mn)(As,P): SAW-assisted domain nucleation. In this case, a small perpendicular field is applied opposite the initial magnetization and the passage of the SAW lowers the domain nucleation barrier.