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Jean-Michel Sallese

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physics.app-ph cond-mat.mes-hall physics.class-ph

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preprint2021arXiv

Non-Hysteretic Condition in Negative Capacitance Junctionless FETs

This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness of the ferroelectric layers giving rise to the negative capacitance behavior. The impact of the technological parameters is investigated in order to ensure hysteresis-free operation. Finally, the stability of NCDG JLFET is predicted over a wide range of temperatures from 77K to 400K. This approach has been assessed with numerical TCAD simulations.

preprint2019arXiv

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

In this paper, an analytical predictive model of interface charge traps in symmetric long channel double-gate junctionless transistors is proposed based on a charge-based model. Interface charge traps arising from the exposure to chemicals, high-energy ionizing radiation or aging mechanism could degrade the charge-voltage characteristics. The model is predictive in a range of temperature from 77K to 400K. The validity of the approach is confirmed by extensive comparisons with numerical TCAD simulations in all regions of operation from deep depletion to accumulation and linear to saturation.

preprint2015arXiv

An Extra Electrostatic Energy in Semiconductors and its Impact in Nanostructures

This work revisits the classical concept of electric energy and suggests that the common definition is likely to generate large errors when dealing with nanostructures. For instance, deriving the electrostatic energy in semiconductors using the traditional formula fails at giving the correct electrostatic force between capacitor plates and reveals the existence of an extra contribution to the standard electrostatic energy. This additional energy is found to proceed from the generation of space charge regions which are predicted when combining electrostatics laws with semiconductor statistics, such as for accumulation and inversion layers. On the contrary, no such energy exists when relying on electrostatics only, as for instance when adopting the so-called full depletion approximation. The same holds for charged or neutral insulators that are still consistent with the customary definition, but which are in fact singular cases. In semiconductors, this additional free energy can largely exceed the energy gained by the dipoles, thus becoming the dominant term. Consequently, erroneous electrostatic forces in nanostructure systems such as for MEMS and NEMS as well as incorrect energy calculations are expected using the standard definition. This unexpected result clearly asks for a generalization of electrostatic energy in matter in order to reconcile basic concepts and to prevent flawed force evaluation in nanostructures with electrical charges.