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Janusz Adamowski

Janusz Adamowski contributes to research discovery and scholarly infrastructure.

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preprint2016arXiv

Transition from positive to negative magnetoresistance induced by a constriction in semiconductor nanowire

We have studied the magnetotransport through an indium antimonide (InSb) nanowire grown in [111] direction, with a geometric constriction and in an external magnetic field applied along the nanowire axis. We have found that the magnetoresistance is negative for the narrow constriction, nearly zero for the constriction of some intermediate radius, and takes on positive values for the constriction with the radius approaching that of the nanowire. For all magnitudes of the magnetic field, the radius of constriction at which the change of the magnetoresistance sign takes place has been found to be almost the same as long as other geometric parameters of the nanowire are fixed. The sign reversing of the magnetoresistance is explained as a combined effect of two factors: the influence of the constriction on the transverse states and the spin Zeeman effect.

preprint2013arXiv

Periodicity of resonant tunneling current induced by the Stark resonances in semiconductor nanowire

The modification of the electronic current resulting from Stark resonances has been studied for the semiconductor nanowire with the double-barrier structure. Based on the calculated current-voltage characteristics we have shown that the resonant tunneling current is a periodic function of the width of the spacer layer. We have also demonstrated that the simultaneous change of the source-drain voltage and the voltage applied to the gate located near the nanowire leads to almost periodic changes of the resonant tunneling current as a function of the source-drain and gate voltages. The periodic properties of the resonant tunneling current result from the formation of the Stark resonance states. If we change the electric field acting in the nanowire, the Stark states periodically acquire the energies from the transport window and enhance the tunneling current in a periodic manner. We have found that the separations between the resonant current peaks on the source-drain voltage scale can be described by a slowly increasing linear function of the Stark state quantum number. This allows us to identify the quantum states that are responsible for the enhancement of the resonant tunneling. We have proposed a method of the experimental observation of the Stark resonances in semiconductor double-barrier heterostructures.

preprint2012arXiv

Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode

A spin- and time-dependent electron transport has been studied in a paramagnetic resonant tunneling diode using the self-consistent Wigner-Poisson method. Based on the calculated current-voltage characteristics in an external magnetic field we have demonstrated that under a constant bias both the spin-up and spin-down current components exhibit the THz oscillations in two different bias voltage regimes. We have shown that the oscillations of the spin-up (down) polarized current result from the coupling between the two resonance states: one localized in the triangular quantum well created in the emitter region and the second localized in the main quantum well. We have also elaborated the one-electron model of the current oscillations, which confirms the results obtained with the Wigner-Poisson method. The spin current oscillations can lower the effectiveness of spin filters based on the paramagnetic resonant tunneling structures and can be used to design the generators of the spin polarized current THz oscillations that can operate under the steady bias and constant magnetic field.

preprint2008arXiv

Tuning the exchange interaction by electric field in laterally coupled quantum dots

The effect of external electric field on the exchange interaction has been studied by an exact diagonalization method for two electrons in laterally coupled quantum dots (QD's). We have performed a systematic study of several nanodevices that contain two gate-defined QD's with different shapes and sizes located between source and drain contacts. The confinement potential is modelled by two potential wells with a variable range and softness. In all the considered nanodevices, the overall dependence of exchange energy $J$ on electric field $F$ is similar, i.e., for low fields $J$ increases with increasing $F$, for intermediate fields $J$ reaches a maximum, and rapidly falls down to zero if $F$ exceeds a certain critical value. However, the $J(F)$ dependence shows characteristic properties that depend on the nanodevice geometry. We have found that the low- and intermediate-field behaviour can be accurately parametrized by linear function $J(F) = \αF + \β$, where $ alpha$ is independent of the nanodevice geometry and softness of the confinement potential. We have shown that the linear $J(F)$ dependence appears only if the tunnel coupling between the QD's is weak, i.e., the interdot separation is sufficiently large. The $J(F)$ dependence becomes non-linear for the strong interdot tunnel coupling. If the QD located near the contact, to which the higher voltage is applied, possesses the elliptic shape and is larger than the other QD, the $J(F)$ dependence shows a plateau in a broad electric-field regime. The linearity and rapid jumps of $J(F)$ as well as the existence of the plateau can be applied to tune the exchange interaction by changing the external electric field.