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Source author record

Jan Böttcher

Jan Böttcher appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scihep-th

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Published work

6 published item(s)

preprint2022arXiv

Counterpropagating topological and quantum Hall edge channels

The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transport gap in disordered two dimensional topological insulators in perpendicular magnetic fields of up to 16 T. Instead, we observe that a topological edge channel (from band inversion) coexists with a counterpropagating quantum Hall edge channel for magnetic fields at which the transition to the insulating regime is expected. For larger fields, we observe only the quantum Hall edge channel with transverse resistance close to $h/e^2$. By tuning the disorder using different fabrication processes, we find evidence that this unexpected $ν=1$ plateau originates from extended quantum Hall edge channels along a continuous network of charge puddles at the edges of the device.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emergent quantum Hall effects below $50$ mT in a two-dimensional topological insulator

The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in HgTe quantum wells dilutely alloyed with Mn. Firstly, a novel quantum Hall state emerges from the quantum spin Hall state at an exceptionally low magnetic field of $\sim 50$ mT. Secondly, tuning towards the bulk $p$-regime, we resolve multiple quantum Hall plateaus at fields as low as $20 - 30$ mT, where transport is dominated by a van Hove singularity in the valence band. These emergent quantum Hall phenomena rely critically on the topological band structure of HgTe and their occurrence at very low fields make them an ideal candidate for interfacing with superconductors to realize chiral Majorana fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fate of Quantum Anomalous Hall Effect in the Presence of External Magnetic Fields and Particle-Hole Asymmetry

The quantum anomalous Hall (QAH) effect, a condensed matter analog of the parity anomaly, is characterized by a quantized Hall conductivity in the absence of an external magnetic field. However, it has been recently shown that, even in the presence of Landau levels, the QAH effect can be distinguished from the conventional quantum Hall (QH) effect due to the parity anomaly. As a signature of this effect, we predicted coexistent counterpropagating QAH and QH edge states. In the present work, we generalize these findings to QAH insulators with broken particle-hole symmetry. In particular, we derive the connection to the spectral asymmetry, which is a topological quantity arising in the context of Dirac-like systems. Moreover, it is shown that, depending on the magnetic field direction, particle-hole asymmetry strengthens or weakens the hybridization of the counterpropagating QH and QAH edge states. Implications for ferro- or paramagnetic topological insulators are derived which paves the way towards identifying signatures of the QAH effect even in external magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Momentum-Dependent Mass and AC Hall Conductivity of Quantum Anomalous Hall Insulators and Their Relation to the Parity Anomaly

The Dirac mass of a two-dimensional QAH insulator is directly related to the parity anomaly of planar quantum electrodynamics, as shown initially in Phys. Rev. Lett. 52, 18 (1984). In this work, we connect the additional momentum-dependent Newtonian mass term of a QAH insulator to the parity anomaly. By calculating the effective action, we reveal that the Newtonian mass term acts like a parity-breaking element of a high-energy regularization scheme. As such, it is directly related to the parity anomaly. In addition, the calculation of the effective action allows us to determine the finite frequency correction to the DC Hall conductivity of a QAH insulator. We derive that the leading order AC correction contains a term proportional to the torsional Hall viscosity. This paves the way to measure this non-dissipative transport coefficient via electrical or magneto-optical experiments. Moreover, we prove that the Newtonian mass significantly changes the resonance structure of the AC Hall conductivity in comparison to pure Dirac systems like graphene.

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preprint2014arXiv

Dirac-screening stabilized surface-state transport in a topological insulator

We report magnetotransport studies on a gated strained HgTe device. This material is a threedimensional topological insulator and exclusively shows surface state transport. Remarkably, the Landau level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range ($3 \times 10^{11} cm^{-2} < n < 1 \times 10^{12} cm^{-2}$). This implies that even at large carrier densities the transport is surface state dominated, where bulk transport would have been expected to coexist already. Moreover, the density dependence of the Dirac-type quantum Hall effect allows to identify the contributions from the individual surfaces. A $k \cdot p$ model can describe the experiments, but only when assuming a steep band bending across the regions where the topological surface states are contained. This steep potential originates from the specific screening properties of Dirac systems and causes the gate voltage to influence the position of the Dirac points rather than that of the Fermi level.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Self-consistent $\textbf{k}\cdot \textbf{p}$ calculations for gated thin layers of 3D Topological Insulators

Topological protected surface states are one of the hallmarks of three-dimensional topological insulators. In this work we theoretically analyze the gate-voltage-effects on a quasi-3D layer of HgTe. We find that while the gapless surface states dominate the transport, as an external gate voltage is applied, the existence of bulk charge carriers is likely to occur. We also find that due to screening effects, physical properties that arise from the bottom surface are gate-voltage independent. Finally, we point out the experimental signatures that characterize these effects.

0 citations0 reviewsNo code linkedOpen access