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Jaakko Akola

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cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph physics.chem-ph physics.comp-ph quant-ph

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preprint2022arXiv

Machine-learned model Hamiltonian and strength of spin-orbit interaction in strained Mg2X (X = Si, Ge, Sn, Pb)

Machine-learned multi-orbital tight-binding (MMTB) Hamiltonian models have been developed to describe the electronic characteristics of intermetallic compounds $\rm Mg_2Si, Mg_2Ge, Mg_2Sn$ , and $\rm Mg_2Pb$ subject to strain. The MMTB models incorporate spin-orbital mediated interactions and they are calibrated to the electronic band structures calculated via density functional theory (DFT) by a massively parallelized multi-dimensional Monte-Carlo search algorithm. The results show that a machine-learned five-band tight-binding model reproduces the key aspects of the valence band structures in the entire Brillouin zone. The five-band model reveals that compressive strain localizes the contribution of the $3s$ orbital of $\rm Mg$ to the conduction bands and the outer shell $p$ orbitals of $\rm X~(X=Si,Ge,Sn,Pb)$ to the valence bands. In contrast, tensile strain has a reversed effect as it weakens the contribution of the $3s$ orbital of $\rm Mg$ and the outer shell $p$ orbitals of $\rm X$ to the conduction bands and valence bands, respectively. The $π$ bonding in the $\rm Mg_2X$ compounds is negligible compared to the $σ$ bonding components, which follow the hierarchy $|σ_{sp}|>|σ_{pp}|>|σ_{ss}|$ , and the largest variation against strain belongs to $σ_{pp}$ . The five-band model allows for estimating the strength of spin-orbit coupling (SOC) in $\rm Mg_2X$ and obtaining its dependence on the atomic number of $\rm X$ and strain. Further, the band structure calculations demonstrate a significant band gap tuning and band splitting due to strain. A compressive strain of $-10\%$ can open a band gap at the $Γ$ point in metallic $\rm Mg_2Pb$ , whereas a tensile strain of $+10\%$ closes the semiconducting band gap of $\rm Mg_2Si$ . A tensile strain of $+5\%$ removes the three-fold degeneracy of valence bands at the $Γ$ point in semiconducting $\rm Mg_2Ge$ .

preprint2014arXiv

Density-functional investigation of molecular graphene: CO on Cu(111)

Man-made artificial graphene has attracted significant attention in the past few years due to the possibilities to construct designer Dirac fermions with unexpected topological properties and applications in nanoelectronics. Here we use a first-principles approach within density-functional theory to study molecular graphene similar to the experiment by Gomes~{\em et al.}, Nature {\bf 483}, 306 (2012). The system comprises carbon monoxide molecules arranged on a copper (111) surface in such a way that a hexagonal lattice is obtained with the characteristic electronic properties of graphene. Our results show in detail how carbon monoxide molecules modify the copper surface (and regions beneath) and create a hexagonal lattice of accumulated electrons between the adsorbate molecules. We also demonstrate how the properties of the formed Dirac fermions change as the CO density is tuned, and provide a direct comparison with experimental scanning tunneling microscope images.

preprint2013arXiv

CPMD simulation of Cu2+ -- phenylalanine complex under micro-solvated environment

The study combines DFT calculations and CPMD simulations to investigate the structures of phenylalanine-copper (II) ([Phe-Cu]2+) complexes and the micro-solvation processes. ....It is found that the phenylalanine moiety appears to be in the neutral form in isolated and mono-hydrated complexes, but in the zwitterionic form in other hydrated complexes (with n no less than 2). .... The present CPMD simulations reveal that the maximum coordination of Cu2+ in the presence of the Phe ligand does not exceed four: the oxygen atoms from three water molecules and one carboxyl oxygen atom of Phe. Any excess water molecules will migrate to the second solvation shell. Moreover a unique structural motif is present in the lowest energy complexes, which is recognized to be significant in stabilizing the structures of the complexes. .....

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