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J. T. Ye

J. T. Ye appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2015arXiv

Two Dimensional Ising Superconductivity in Gated MoS$_{2}$

The Zeeman effect, which is usually considered to be detrimental to superconductivity, can surprisingly protect the superconducting states created by gating a layered transition metal dichalcogenide. This effective Zeeman field, which is originated from intrinsic spin orbit coupling induced by breaking in-plane inversion symmetry, can reach nearly a hundred Tesla in magnitude. It strongly pins the spin orientation of the electrons to the out-of-plane directions and protects the superconductivity from being destroyed by an in-plane external magnetic field. In magnetotransport experiments of ionic-gate MoS$_{2}$ transistors, where gating prepares individual superconducting state with different carrier doping, we indeed observe a spin- protected superconductivity by measuring an in-plane critical field $\textit{B}$$_{c2}$ far beyond the Pauli paramagnetic limit. The gating-enhanced $\textit{B}$$_{c2}$ is more than an order of magnitude larger compared to the bulk superconducting phases where the effective Zeeman field is weakened by interlayer coupling. Our study gives the first experimental evidence of an Ising superconductor, in which spins of the pairing electrons are strongly pinned by an effective Zeeman field.

preprint2010arXiv

Accessing the transport properties of graphene and its multi-layers at high carrier density

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in monolayer the conductivity saturates, in bi- and trilayer flling of the higher energy bands is observed to cause a non-monotonic behavior of the conductivity, and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field-effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.