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J. Suffczyński

J. Suffczyński appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

5 published item(s)

preprint2016arXiv

Fe dopant in ZnO: 2+ vs 3+ valency and ion-carrier s,p-d exchange interaction

Dopants of transition metal ions in II-VI semiconductors exhibit native 2+ valency. Despite this, 3+ or mixed 3+/2+ valency of iron ions in ZnO was reported previously. Several contradictory mechanisms have been put forward for explanation of this fact so far. Here, we analyze Fe valency in ZnO by complementary theoretical and experimental studies. Our calculations within the generalized gradient approximation (GGA+U) indicate that the Fe ion is a relatively shallow donor. Its stable charge state is Fe2+ in ideal ZnO, however, the high energy of the (+/0) transition level enhances the compensation of Fe2+ to Fe3+ by non-intentional acceptors in real samples. Using several experimental methods like electron paramagnetic resonance, magnetometry, conductivity, excitonic magnetic circular dichroism and magneto-photoluminescence we confirm the 3+ valency of the iron ions in polycrystalline (Zn,Fe)O films with the Fe content attaining 0.2%.We find a predicted increase of n-type conductivity upon the Fe doping with the Fe donor ionization energy of 0.25 +/- 0.02 eV consistent with the results of theoretical considerations. Moreover, our magnetooptical measurements confirm the calculated non-vanishing s,p-d exchange interaction between band carriers and localized magnetic moments of the Fe3+ ions in the ZnO, being so far an unsettled issue.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Epitaxial growth and Photoluminescence Excitation spectroscopy of CdSe Quantum Dots in (Zn,Cd)Se barrier

Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87 eV, that is below the energy of Mn$^{2+}$ ions internal transition (2.1 eV). This opens a perspective for implementation of epitaxial CdSe QDs doped with several Mn ions as, e. g., the light sources in high quantum yield magnetooptical devices. Polarization resolved Photoluminescence Excitation measurements of individual QDs reveal sharp ($Γ<$ 150 $μ$eV) maxima and transfer of optical polarization to QD confining charged exciton state with efficiency attaining 26 %. The QD doping with single Mn$^{2+}$ ions is achieved.

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preprint2013arXiv

Designing quantum dots for solotronics

Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non-radiative recombination, regarded as a severe problem, limited development of quantum dots with magnetic ions. Our photoluminescence studies on, so far unexplored, individual CdTe dots with single cobalt ions and individual CdSe dots with single manganese ions show, however, that even if energetically allowed, the single ion related non-radiative recombination is negligible in such zero-dimensional structures. This opens solotronics for a wide range of even not yet considered systems. Basing on the results of our single spin relaxation experiments and on the material trends, we identify optimal magnetic ion-quantum dot systems for implementation of a single-ion based spin memory.

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preprint2013arXiv

Magneto-Optical Effects Enhancement in DMS Layers Utilizing 1-D Photonic Crystal

We propose a theoretical design of a structure combining a diluted magnetic semiconductor (DMS) layer with one-dimensional photonic crystal and show that it allows for a sizable (a few-fold) enhancement of the magneto-optical Kerr effect (MOKE) magnitude. We base our calculations on the transfer matrix method assuming realistic, and optimal with respect to a sample growth, parameters. We investigate representative cases of (Ga,Mn)N or (Cd,Mn)Te DMS layers deposited on the top of a respectively GaN- or CdTe-based distributed Bragg reflector, and highlight the applicability of the proposed design for both: III-V wurtzite and II-VI zinc-blende DMS.

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preprint2013arXiv

Magnetooptical properties of (Ga,Fe)N layers

Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the grow conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism (MCD). Possible reasons for differences in magnetic response determined by MCD and SQUID measurements are discussed.

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