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J. Schultheiß

J. Schultheiß contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Domain wall-grain boundary interactions in polycrystalline Pb(Zr0.7Ti0.3)O3 piezoceramics

Interactions between grain boundaries and domain walls were extensively studied in ferroelectric films and bicrystals. This knowledge, however, has not been transferred to polycrystalline ceramics, in which the grain size represents a powerful tool to tailor the dielectric and electromechanical response. Here, we relate changes in dielectric and electromechanical properties of a bulk polycrystalline Pb(Zr0.7Ti0.3)O3 to domain wall interactions with grain boundaries. Samples with grain sizes in the range of 3.9 - 10.4 micrometers were prepared and their microstructure, crystal structure, and dielectric/electromechanical properties were investigated. A decreasing grain size was accompanied by a reduction in large-signal electromechanical properties and an increase in small-signal dielectric permittivity. High-energy diffraction analysis revealed increasing microstrains upon decreasing the grain size, while piezoresponse force microscopy indicated an increased local coercive voltage near grain boundaries. The changes in properties were thus related to strained material volume close to the grain boundaries exhibiting reduced domain wall dynamics.

preprint2020arXiv

Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced d.c. conductance. Our findings are explained based on established segregation enthalpy profiles for oxygen vacancies and interstitials, providing a microscopic model for previous, seemingly disconnected observations ranging from insulating to conducting domain wall behavior. In addition, we observe variations in conductance between different nominally neutral walls that we attribute to deviations from the ideal charge-neutral structure within the bulk, leading to a superposition of extrinsic and intrinsic contributions. Our study clarifies the complex transport properties at nominally neutral domain walls in hexagonal manganites and establishes new possibilities for tuning their electronic response based on oxidation conditions, opening the door for domain-wall based sensor technology.