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Researcher profile

J. Roqueta

J. Roqueta contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2014arXiv

Engineering the microstructure and magnetism of La$_2$CoMnO$_6$ thin films by tailoring oxygen stoichiometry

We report on the magnetic and structural properties of ferromagnetic-insulating La$_2$CoMnO$_6$ thin films grown on top of (001) STO substrates by means of RF sputtering technique. Careful structural analysis, by using synchrotron X-ray diffraction, allows identifying two different crystallographic orientations that are closely related to oxygen stoichiometry and to the features (coercive fields and remanence) of the hysteresis loops. Both Curie temperature and magnetic hysteresis turn out to be dependent on the oxygen stoichiometry. In situ annealing conditions allow tailoring the oxygen content of the films, therefore controlling their microstructure and magnetic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Chemical Diffusion at Mixed Ionic Electronic Semiconductor Interfaces and comparison with La2NiO4+d epitaxial thin films

A simple model to describe Mixed Ionic Electronic Conductors (MIEC) in terms of standard semiconductor physics is described. This model allows to understand defect equilibrium and charge transport at ideal heterojunctions between materials simultaneously conducting electronic and ionic point defects and to explore how rectifying effects on the electronic or ionic currents may affect the chemical diffusion and voltage at the interfaces under polarization. We found qualitatively good agreement with experimental measurements of the electrical conductivity relaxation of La2NiO4+d thin films epitaxially grown on NdGaO3 (110) substrates when the possible oxygen exchange between film and substrate is taken into account. We discuss the implications of this model to understand space charge layer formation and chemical diffusion on oxide thin film heterostructures when exposed to high temperatures and different oxygen partial pressures.

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