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J. Ridderbos

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2 publications

preprint2021arXiv

Magnetic, thermal, and topographic imaging with a nanometer-scale SQUID-on-cantilever scanning probe

Scanning superconducting quantum interference device (SQUID) microscopy is a magnetic imaging technique combining high-field sensitivity with nanometer-scale spatial resolution. State-of-the-art SQUID-on-tip probes are now playing an important role in mapping correlation phenomena, such as superconductivity and magnetism, which have recently been observed in two-dimensional van der Waals materials. Here, we demonstrate a scanning probe that combines the magnetic and thermal imaging provided by an on-tip SQUID with the tip-sample distance control and topographic contrast of a non-contact atomic force microscope (AFM). We pattern the nanometer-scale SQUID, including its weak-link Josephson junctions, via focused ion beam milling at the apex of a cantilever coated with Nb, yielding a sensor with an effective diameter of 365 nm, field sensitivity of 9.5 nT/Hz\text{nT}/\sqrt{\text{Hz}} and thermal sensitivity of 620 nK/Hz\text{nK}/\sqrt{\text{Hz}}, operating in magnetic fields up to 1.0 T. The resulting SQUID-on-lever is a robust AFM-like scanning probe that expands the reach of sensitive nanometer-scale magnetic and thermal imaging beyond what is currently possible.

preprint2013arXiv

Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO2_2 using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states.

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