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Researcher profile

J. Purans

J. Purans contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

3 published item(s)

preprint2022arXiv

Optical properties of oxygen-containing yttrium hydride thin films during and after the deposition

The synthesis of the photochromic YHO films is based on the oxidation of deposited yttrium hydride in ambient conditions. The actual state of the films during the deposition process, which is influenced by the deposition pressure and the oxidation caused by the residual gases, is not completely known. We report on the YHxOy thin films deposited by reactive pulsed-DC magnetron sputtering. Since the visible light transmittance is closely related to the phase and chemical composition of the films, in-situ transmittance measurements during and after deposition are performed. Ex-situ spectroscopic ellipsometry is used to determine the optical constants of YHxOy throughout the film thickness. In order to obtain metallic YH2-x films, the densest possible structure with a high deposition rate is required, otherwise the films could already be partially transparent during the deposition. The transmittance is higher if deposition pressure is increased. This is because of the oxidation promoted by more porous growth of the microstructure that is observed at the surface and cross-section images of the films. The films exhibit a refractive index gradient perpendicular to the substrate surface, which is related to the porosity and variation of the chemical composition.

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preprint2022arXiv

Tailoring of rhenium oxidation state in ReOx thin films during reactive HiPIMS deposition process and following annealing

Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium in a 6+ oxidation state. Here we present a novel approach for the deposition of ReOx (x = 1.6-2.9) thin films using reactive high power impulse magnetron sputtering (r-HiPIMS) from a metallic rhenium target in a mixed Ar/O2 atmosphere. The thin films were deposited in the gas-sustained self-sputtering regime, observed during r-HiPIMS process according to current waveforms. The influence of the substrate temperature, the oxygen-to-argon flow ratio and post-annealing at 250 °C in the air for 3 h on the properties of the films were studied. The as-deposited films have an X-ray amorphous structure (a-ReOx) when deposited at room temperature while a nano-crystalline \b{eta}-ReO2 phase when deposited at elevated temperatures (150 or 250 °C). The amorphous a-ReOx can be converted into the crystalline ReO3 with a lattice parameter of 3.75 Å upon annealing in the air. The surface morphology of the films is dense without detectable voids when elevated substrate temperatures are used. Various Re oxidation states are observed on the surface of the films in different ratios depending on the deposition parameters. All samples exhibit electrical resistivity on the order of 10-3 Ohmxcm and optical properties typical for thin metallic films.

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preprint2020arXiv

Ab initio molecular dynamics simulations of negative thermal expansion in ScF3: the effect of the supercell size

Scandium fluoride (ScF3) belongs to a class of negative thermal expansion (NTE) materials. It shows a strong lattice contraction up to about 1000 K switching to expansion at higher temperatures. Here the NTE effect in ScF3 is studied in the temperature range from 300 K to 1600 K using ab initio molecular dynamics (AIMD) simulations in the isothermal-isobaric (NpT) ensemble. The temperature dependence of the lattice constant, inter-atomic Sc-F-Sc bond angle distributions and the Sc-F and Sc-Sc radial distribution functions is obtained as a function of supercell size from 2a x 2a x 2a to 5a x 5a x 5a where a is the lattice parameter of ScF3. A comparison with the experimental Sc K-edge EXAFS data at 600 K is used to validate the accuracy of the AIMD simulations. Our results suggest that the AIMD calculations are able to reproduce qualitatively the NTE effect in ScF3, however a supercell size larger than 2a x 2a x 2a should be used to account accurately for dynamic disorder. The origin of the NTE in ScF3 is explained by the interplay between expansion and rotation of ScF6 octahedra.

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