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Researcher profile

J. -Ph. Jay

J. -Ph. Jay contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2009arXiv

Direct and inverse measurement of thin films magnetostriction

Two techniques of measurements of thin film magnetostriction are compared: direct, when changes of the substrate curvature caused by the film magnetization are controlled, and inverse ("indirect"), when the modification of the magnetic anisotropy induced by the substrate deformation (usually bending) is measured. We demonstrate how both the elastic strength of the substrate and the effective magneto-mechanical coupling between the substrate deformation and magnetic anisotropy of the film depend on different conditions of bending. Equations to be used for magnetostriction value determination in typical cases are given and critical parameters for the corresponding approximations are identified.

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preprint2005arXiv

Magnetostrictive hysteresis of TbCo/CoFe multilayers and magnetic domains

Magnetic and magnetostrictive hysteresis loops of TbCo/CoFe multilayers under field applied along the hard magnetization axis are studied using vectorial magnetization measurements, optical deflectometry and magneto optical Kerr microscopy. Even a very small angle misalignment between hard axis and magnetic field direction is shown to drastically change the shape of magnetization and magnetostrictive torsion hysteresis loops. Two kinds of magnetic domains are revealed during the magnetization: big regions with opposite rotation of spontaneous magnetization vector and spontaneous magnetic domains which appear in a narrow field interval and provide an inversion of this rotation. We show that the details of the hysteresis loops of our exchange-coupled films can be described using the classical model of homogeneous magnetization rotation of single uniaxial films and the configuration of observed domains. The understanding of these features is crucial for applications (for MEMS or microactuators) which benefit from the greatly enhanced sensitivity near the point of magnetic saturation at the transverse applied field.

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