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J. P. Bourgoin

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cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

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preprint2012arXiv

Studying Free-Space Transmission Statistics and Improving Free-Space QKD in the Turbulent Atmosphere

The statistical fluctuations in free-space links in the turbulent atmosphere are important for the distribution of quantum signals. To that end, we first study statistics generated by the turbulent atmosphere in an entanglement based free-space quantum key distribution (QKD) system. Using the insights gained from this analysis, we study the effect of link fluctuations on the security and key generation rate of decoy state QKD concluding that it has minimal effect in the typical operating regimes. We then investigate the novel idea of using these turbulent fluctuations to our advantage in QKD experiments. We implement a signal-to-noise ratio filter (SNRF) in our QKD system which rejects measurements during periods of low transmission efficiency, where the measured quantum bit error rate (QBER) is temporarily elevated. Using this, we increase the total secret key generated by the system from 78,009 bits to 97,678 bits, representing an increase of 25.2% in the final secure key rate, generated from the same raw signals. Lastly, we present simulations of a QKD exchange with an orbiting LEO satellite and show that an SNRF will be extremely useful in such a situation, allowing many more passes to extract a secret key than would otherwise be possible.

preprint2006arXiv

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi level pinning at the molecule-metal interface

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices and we examine to what extent the nature of the pi end-group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. For all the pi-groups investigated here, we observe rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (S. Lenfant et al., Nano Letters 3, 741 (2003)).The experimental current-voltage curves are analyzed with a simple analytical model, from which we extract the energy position of the molecular orbital of the pi-group in resonance with the Fermi energy of the electrodes. We report the experimental studies of the band lineup in these silicon/alkyl-pi conjugated molecule/metal junctions. We conclude that Fermi level pinning at the pi-group/metal interface is mainly responsible for the observed absence of dependence of the rectification effect on the nature of the pi-groups, even though they were chosen to have significant variations in their electronic molecular orbitals