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J. N. Wang

J. N. Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-conquant-ph

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Published work

5 published item(s)

preprint2021arXiv

Magnetically tunable Shubnikov-de Hass oscillations in MnBi2Te4

Shubnikov-de Hass oscillations are directly observed in undoped antiferromagnetic topological insulator MnBi2Te4. With increasing magnetic fields, the oscillation period decreases gradually in the magnetic transition from canted antiferromagnetism to ferromagnetism and then saturates in high magnetic fields, indicating the field-induced evolution of the band structure. From the analysis of the high-field oscillations, a nontrivial Berry phase and a small effective mass are extracted, in agreement with the predicted Weyl semimetal phase in ferromagnetic MnBi2Te4. Furthermore, rotating the magnetization of MnBi2Te4 can lead to a splitting of the high-field oscillations, which suggests the enhanced asymmetry of the Weyl cones in tilted fields. Therefore, the observation of these magnetically tunable quantum oscillations clearly demonstrates the indispensable role of field in tuning the band structure or physical properties of MnBi2Te4.

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preprint2020arXiv

Surface-induced linear magnetoresistance in antiferromagnetic topological insulator MnBi2Te4

Through a thorough magneto-transport study of antiferromagnetic topological insulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR) with a two-dimensional (2D) character is found in high perpendicular magnetic fields and temperatures up to at least 260 K. The nonlinear Hall effect further reveals the existence of high-mobility surface states in addition to the bulk states in MBT. We ascribe the 2D LMR to the high-mobility surface states of MBT, thus unveiling a transport signature of surface states in thick MBT films. A suppression of LMR near the Neel temperature of MBT is also noticed, which might suggest the gap opening of surface states due to the paramagnetic-antiferromagnetic phase transition of MBT. Besides these, the failure of the disorder and quantum LMR model in explaining the observed LMR indicates new physics must be invoked to understand this phenomenon.

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preprint2014arXiv

Large gap, a pseudogap and proximity effect in the Bi2Te3/Fe1+yTe interfacial superconductor

We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show a very large superconducting twin-gap structure with an energy scale exceeding that of bulk FeSe or FeSe1-xTex by a factor of 4. While the larger gap is isotropic and attributed to a thin FeTe layer in proximity of the interface, the smaller gap has a pronounced anisotropy and is associated with proximity-induced superconductivity in the topological insulator Bi2Te3. Zero resistance is lost above 8 K, but superconducting fluctuations are visible up to at least 12 K and the large gap is replaced by a pseudogap that persists up to 40 K. The spectra show a pronounced zero-bias conductance peak in the superconducting state, which may be a signature of an unconventional pairing mechanism.

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preprint2010arXiv

Origin and the role of device physics in the magnetic field effect in organic semiconductor devices

A small magnetic field (~30 mT) can effectively modulate the electroluminescence, conductance and/or photocurrent of organic semiconductor based devices, up to 10% at room temperature. This organic magnetic field effect (OMFE) is one of the most unusual phenomena of both organic electronics and, more basically, magnetism, since all device components are nonmagnetic. However, in spite of latest surge of research interest, its underlying mechanism is still hotly debated. Here we experimentally identify that the magnetic field induced increase of intersystem crossing rate (between either excitons or polaron pairs), and decrease of triplet exciton-polaron quenching rate are responsible for the observed OMFEs. The diversity of observed OMFE results, such as sign change and operating condition dependence, originates from the difference of devices physics.

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preprint2010arXiv

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality epifilms, a two-step growth method is adopted for the van der Waal epitaxy of Bi2Se3 to proceed. By employing vicinal Si(111) substrate surfaces, the in-pane growth rate anisotropy of Bi2Se3 is explored to achieve single crystalline Bi2Se3 epifilms, in which threading defects and twins are effectively suppressed. Optimization of the growth parameters has resulted in vicinal Bi2Se3 films showing a carrier mobility of ~ 2000 cm2V-1s-1 and the background doping of ~ 3 x 1018 cm-3 of the as-grown layers. Such samples not only show relatively high magnetoresistance but also a linear dependence on magnetic field.

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