Researcher profile

J. M. Wesselinowa

J. M. Wesselinowa contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2006arXiv

Size and doping effects on the coercive field of ferroelectric nanoparticles

A microscopic model for describing ferroelectric nanoparticles is proposed which allows us to calculate the polarization as a function of an external electric field, the temperature, the defect concentration and the particle size. The interaction of the constituents of the material, arranged in layers, depends on both the coupling strength at the surface and that of defect shells in addition to the bulk values. The analysis is based on an Ising model in a transverse field, modified in such a manner to study the influence of size and doping effects on the hysteresis loop of the nanoparticles. Using a Green function technique in real space we find the coercive field, the remanent polarization and the critical temperature which differ significantly from the bulk behavior. Depending on the varying coupling strength due to the kind of doping ions and the surface configuration, the coercive field and the remanent polarization can either increase or decrease in comparison to the bulk behavior. The theoretical results are compared with a variety of different experimental data.

preprint2005arXiv

Influence of layer defects on the damping in ferroelectric thin films

A Green's function technique for a modified Ising model in a transverse field is applied, which allows to calculate the damping of the elementary excitations and the phase transition temperature of ferroelectric thin films with structural defects. Based on an analytical expression for the damping function, we analyze its dependence on temperature, film thickness and interaction strength numerically. The results demonstrate that defect layers in ferroelectric thin films, layers with impurities or vacancies as well as layers with dislocations are able to induce a strong increase of the damping due to different exchange interactions within the defect layers. The results are in good agreement with experimental data for thin ferroelectric films with different thickness.

preprint2004arXiv

Impact of layer defects in ferroelectric thin films

Based on a modified Ising model in a transverse field we demonstrate that defect layers in ferroelectric thin films, such as layers with impurities, vacancies or dislocations, are able to induce a strong increase or decrease of the polarization depending on the variation of the exchange interaction within the defect layers. A Green's function technique enables us to calculate the polarization, the excitation energy and the critical temperature of the material with structural defects. Numerically we find the polarization as function of temperature, film thickness and the interaction strengths between the layers. The theoretical results are in reasonable accordance to experimental datas of different ferroelectric thin films.