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Researcher profile

J. M. van Ruitenbeek

J. M. van Ruitenbeek contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Trust 21 - EmergingVerification L1Unclaimed author
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Published work

15 published item(s)

preprint2016arXiv

Quantum interference patterns around magnetic impurities in a 2D electron gas with strong Rashba spin-orbit interaction

Explicit dependencies of the local density of states and the magnetization local density of states have been obtained around magnetic point defects in a two-dimensional electron gas with Rashba spin-orbit interaction . The expressions are given in the Born approximation for arbitrary magnitude and orientation of the defect magnetic moment, and for arbitrary size of the constant of spin-orbit interaction alpha/. On the basis of our asymptotically exact formulas a procedure for the determination of the constant alpha/ in STM experiments is proposed. The novel analytical results are compared with the numerical and approximate results of previous work. At variance with earlier work we find that that magnetic scattering in the presence of spin-orbit interaction does not modify the local density of states and that the spin texture resulting from in-plain orientation of the defect magnetic moment, and elastic scattering, is not a purely in-plane spin texture.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large tunable image-charge effects in single-molecule junctions

The characteristics of molecular electronic devices are critically determined by metal-organic interfaces, which influence the arrangement of the orbital levels that participate in charge transport. Studies on self-assembled monolayers (SAMs) show (molecule-dependent) level shifts as well as transport-gap renormalization, suggesting that polarization effects in the metal substrate play a key role in the level alignment with respect to the metal's Fermi energy. Here, we provide direct evidence for an electrode-induced gap renormalization in single-molecule junctions. We study charge transport in single porphyrin-type molecules using electrically gateable break junctions. In this set-up, the position of the occupied and unoccupied levels can be followed in situ and with simultaneous mechanical control. When increasing the electrode separation, we observe a substantial increase in the transport gap with level shifts as high as several hundreds of meV for displacements of a few ångstroms. Analysis of this large and tunable gap renormalization with image-charge calculations based on atomic charges obtained from density functional theory confirms and clarifies the dominant role of image-charge effects in single-molecule junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Fermi surface contours obtained from STM images around surface point defects

We present a theoretical analysis of the standing wave patterns in STM images, which occur around surface point defects. We consider arbitrary dispersion relations for the surface states and calculate the conductance for a system containing a small-size tunnel contact and a surface impurity. We find rigorous theoretical relations between the interference patterns in the real-space STM images, their Fourier transforms and the Fermi contours of two-dimensional electrons. We propose a new method for reconstructing Fermi contours of surface electron states, directly from the real-space STM images around isolated surface defects.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Conductance of a STM contact on the surface of a thin film

The conductance of a contact, having a radius smaller than the Fermi wave length, on the surface of a thin metal film is investigated theoretically. It is shown that quantization of the electron energy spectrum in the film leads to a step-like dependence of differential conductance G(V) as a function of applied bias eV. The distance between neighboring steps in eV equals the energy level spacing due to size quantization. We demonstrate that a study of G(V) for both signs of the voltage maps the spectrum of energy levels above and below Fermi surface in scanning tunneling experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Sputter gas pressure effects on the properties of Sm-Co thin films deposited from a single target

We grow epitaxial Sm-Co thin films by sputter deposition from an alloy target with a nominal SmCo5 composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo5-like to a Sm2Co7-like phase. The composition, crystal structure, morphology and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction and magnetization measurements. We find that the various properties are sensitive to the sputter background pressure in different ways. In particular, the lattice parameter changes in a continuous way, the coercive fields vary continuously with a maximum value of 3.3 T, but the saturation magnetization peaks when the lattice parameter is close to that of Sm2Co7. Moreover, we find that the Sm content of the films is higher than expected from the expected stoichiometry.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Bulk and Surface Nucleation Processes in Ag2S Conductance Switches

We studied metallic Ag formation inside and on the surface of Ag2S thin films, induced by the electric field created with a STM tip. Two clear regimes were observed: cluster formation on the surface at low bias voltages, and full conductance switching at higher bias voltages (V > 70mV). The bias voltage at which this transition is observed is in agreement with the known threshold voltage for conductance switching at room temperature. We propose a model for the cluster formation at low bias voltage. Scaling of the measured data with the proposed model indicates that the process takes place near steady state, but depends on the STM tip geometry. The growth of the clusters is confirmed by tip retraction measurements and topography scans. This study provides improved understanding of the physical mechanisms that drive conductance switching in solid electrolyte memristive devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transition Voltage Spectroscopy and the Nature of Vacuum Tunneling

Transition Voltage Spectroscopy (TVS) has been proposed as a tool to analyze charge transport through molecular junctions. We extend TVS to Au-vacuum-Au junctions and study the distance dependence of the transition voltage V_t(d) for clean electrodes in cryogenic vacuum. On the one hand, this allows us to provide an important reference for V_t(d)-measurements on molecular junctions. On the other hand, we show that TVS forms a simple and powerful test for vacuum tunneling models.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum interference effects in a system of two tunnel point-contacts in the presence of single scatterer: simulation of a double-tip STM experiment

The conductance of systems containing two tunnel point-contacts and a single subsurface scatterer is investigated theoretically. The problem is solved in the approximation of s-wave scattering giving analytical expressions for the wave functions and for the conductance of the system. Conductance oscillations resulting from the interference of electron waves passing through different contacts and their interference with the waves scattered by the defect are analyzed. The prospect for determining the depth of the impurity below the metal surface by using the dependence of the conductance as a function of the distance between the contacts is discussed. It is shown that the application of an external magnetic field results in Aharonov-Bohm type oscillations in the conductance, the period of which allows detection of the depth of the defect in a double tip STM experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Theory of oscillations in the STM conductance resulting from subsurface defects (Review Article)

In this review we present recent theoretical results concerning investigations of single subsurface defects by means of a scanning tunneling microscope (STM). These investigations are based on the effect of quantum interference between the electron partial waves that are directly transmitted through the contact and the partial waves scattered by the defect. In particular, we have shown the possibility imaging the defect position below a metal surface by means of STM. Different types of subsurface defects have been discussed: point-like magnetic and non-magnetic defects, magnetic clusters in a nonmagnetic host metal, and non-magnetic defects in a s-wave superconductor. The effect of Fermi surface anisotropy has been analyzed. Also, results of investigations of the effect of a strong magnetic field to the STM conductance of a tunnel point contact in the presence of a single defect has been presented.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Magneto-orientation and quantum size effect in SP-STM conductance in the presence of a subsurface magnetic cluster

The influence of a single magnetic cluster in a non-magnetic host metal on the spin current $\mathbf{j}^{(s)}$ and the charge current $\mathbf{j}$ in the vicinity of a ferromagnetic STM tip is studied theoretically. Spin-flip processes due to electron interaction with the cluster are taken into account. We show that quantum interference between the partial waves injected from the STM tip and those scattered by the cluster results in the appearance of components perpendicular to the initial polarization of the spin current $\mathbf{j}^{(s)}$, which obtain a strongly inhomogeneous spatial distribution. This interference produces oscillations of the conductance as a function of the distance between the contact and the cluster center. The oscillation amplitude depends on the current polarization. We predict a strong magneto-orientational effect: the conductance oscillations may grow, shrink, or even vanish for rotation of the cluster magnetic moment $\mathbfμ_{\mathrm{eff}}$ by an external magnetic field. These results can be used for the determination of the $ \mathbfμ_{\mathrm{eff}}$ for magnetic clusters below a metal surface.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Metallic properties of magnesium point contacts

We present an experimental and theoretical study of the conductance and stability of Mg atomic-sized contacts. Using Mechanically Controllable Break Junctions (MCBJ), we have observed that the room temperature conductance histograms exhibit a series of peaks, which suggests the existence of a shell effect. Its periodicity, however, cannot be simply explained in terms of either an atomic or electronic shell effect. We have also found that at room temperature, contacts of the diameter of a single atom are absent. A possible interpretation could be the occurrence of a metal-to-insulator transition as the contact radius is reduced, in analogy with what it is known in the context of Mg clusters. However, our first principle calculations show that while an infinite linear chain can be insulating, Mg wires with larger atomic coordinations, as in realistic atomic contacts, are alwaysmetallic. Finally, at liquid helium temperature our measurements show that the conductance histogram is dominated by a pronounced peak at the quantum of conductance. This is in good agreement with our calculations based on a tight-binding model that indicate that the conductance of a Mg one-atom contact is dominated by a single fully open conduction channel.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

The molecular signature of highly conductive metal-molecule-metal junctions

The simplicity of single-molecule junctions based on direct bonding of a small molecule between two metallic electrodes make them an ideal system for the study of fundamental questions related to molecular electronics. Here we study the conductance properties of six different molecules suspended between Pt electrodes. All the molecular junctions show a typical conductance of about 1G0 which is ascribed to the dominant role of the Pt contacts. However, despite the metallic-like conductivity, the individual molecular signature is well-expressed by the effect of molecular vibrations in the inelastic contribution to the conductance.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Magneto-quantum oscillations of the conductance of a tunnel point-contact in the presence of a single defect

The influence of a quantizing magnetic field $H$ to the conductance of a tunnel point contact in the presence of the single defect has been considered. We demonstrate that the conductance exhibits specific magneto-quantum oscillations, the amplitude and period of which depend on the distance between the contact and the defect. We show that a non-monotonic dependence of the point-contact conductance results from a superposition of two types of oscillations: A short period oscillation arising from electron focusing by the field $H$ and a long period oscillation of Aharonov-Bohm-type originated from the magnetic flux passing through the closed trajectories of electrons moving from the contact to the defect and returning back to the contact.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Effect of bonding of a CO molecule on the conductance of atomic metal wires

We have measured the effect of bonding of a CO molecule on the conductance of Au, Cu, Pt, and Ni atomic contacts at 4.2 K. When CO gas is admitted to the metal nano contacts, a conductance feature appears in the conductance histogram near 0.5 of the quantum unit of conductance, for all metals. For Au, the intensity of this fractional conductance feature can be tuned with the bias voltage, and it disappears at high bias voltage (above $\sim$ 200 mV). The bonding of CO to Au appears to be weakest, and associated with monotomic Au wire formation.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Evidence for a single hydrogen molecule connected by an atomic chain

Stable, single-molecule conducting-bridge configurations are typically identified from peak structures in a conductance histogram. In previous work on Pt with H$_2$ at cryogenic temperatures it has been shown that a peak near 1 $G{_0}$ identifies a single molecule Pt-H$_{2}$-Pt bridge. The histogram shows an additional structure with lower conductance that has not been identified. Here, we show that it is likely due to a hydrogen decorated Pt chain in contact with the H$_2$ molecular bridge.

0 citations0 reviewsNo code linkedOpen access