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J. M. Sage

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physics.atom-ph quant-ph

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preprint2015arXiv

Scalable Loading of a Two-Dimensional Trapped-Ion Array

We describe rapid, random-access loading of a two-dimensional (2D) surface-electrode ion-trap array based on two crossed photo-ionization laser beams. With the use of a continuous flux of pre-cooled neutral atoms from a remotely-located source, we achieve loading of a single ion per site while maintaining long trap lifetimes and without disturbing the coherence of an ion quantum bit in an adjacent site. This demonstration satisfies all major criteria necessary for loading and reloading extensive 2D arrays, as will be required for large-scale quantum information processing. Moreover, the already high loading rate can be increased by loading ions in parallel with only a concomitant increase in photo-ionization laser power and no need for additional atomic flux.

preprint2014arXiv

Ion traps fabricated in a CMOS foundry

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

preprint2014arXiv

Measurement of Ion Motional Heating Rates over a Range of Trap Frequencies and Temperatures

We present measurements of the motional heating rate of a trapped ion at different trap frequencies and temperatures between $\sim$0.6 and 1.5 MHz and $\sim$4 and 295 K. Additionally, we examine the possible effect of adsorbed surface contaminants with boiling points below $\sim$105$^{\circ}$C by measuring the ion heating rate before and after locally baking our ion trap chip under ultrahigh vacuum conditions. We compare the heating rates presented here to those calculated from available electric-field noise models. We can tightly constrain a subset of these models based on their expected frequency and temperature scaling interdependence. Discrepancies between the measured results and predicted values point to the need for refinement of theoretical noise models in order to more fully understand the mechanisms behind motional trapped-ion heating.

preprint2013arXiv

Insensitivity of Ion Motional Heating Rate to Trap Material over a Large Temperature Range

We present measurements of trapped-ion motional-state heating rates in niobium and gold surface-electrode ion traps over a range of trap-electrode temperatures from approximately 4 K to room temperature (295 K) in a single apparatus. Using the sideband-ratio technique after resolved-sideband cooling of single ions to the motional ground state, we find low-temperature heating rates more than two orders of magnitude below the room-temperature values and approximately equal to the lowest measured heating rates in similarly-sized cryogenic traps. We find similar behavior in the two very different electrode materials, suggesting that the anomalous heating process is dominated by non-material-specific surface contaminants. Through precise control of the temperature of cryopumping surfaces, we also identify conditions under which elastic collisions with the background gas can lead to an apparent steady heating rate, despite rare collisions.