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Researcher profile

J. M. Morbec

J. M. Morbec contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2022arXiv

A comprehensive study on the processing of Co:ZnO ceramics: defect chemistry engineering and grain growth kinetics

In this report we present a systematic study on the preparation of Co:ZnO ceramics via standard solid-state route from different Co precursors (Co3O4, CoO and metallic Co) and atmospheres (O2 and Ar). Particular emphasis was done on the defect chemistry engineering and on the sintering growth kinetics. First-principles calculations based on density functional theory were employed to determine the formation energy of the main point defects in ZnO and Co:ZnO systems. Based on the theoretical results a set of chemical reactions was proposed. A detailed microstructural characterization was performed in order to determine the degree of Co incorporation into the ZnO lattice. The samples prepared in Ar atmosphere and from metallic Co presents the highest Co solubility limit (lower apparent Co incorporation activation energy) due to the incongruent ZnO decomposition. The determination of the parameters of the sintering growth kinetics reveals that Co3O4 is the best sintering additive in order to achieve higher densities in both sintering atmospheres. The results give evidences that the sintering in O2 is effective in promoting zinc vacancies in the ZnO structure, while the sintering in Ar promotes zinc interstitial defects. Our findings give valuable contribution to the understanding of the preparation of Co-doped ZnO ceramics and the sintering growth kinetics, what would allow to improve the state of the art on the processing of the material at both bulk and nanometric scales.

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preprint2020arXiv

Defect Induced Room Temperature Ferromagnetism in High Quality Co-doped ZnO Bulk Samples

The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1-xCoxO) bulk samples synthesized via standard solid-state reaction route. Reference paramagnetic Co-doped ZnO samples with low level of structural defects are subjected to heat treatments in a reductive atmosphere in order to introduce defects in the samples in a controlled way. A detailed structural analysis is carried out in order to characterize the induced defects and their concentration. The magnetometry revealed the coexistence of a paramagnetic and a ferromagnetic phase at room temperature in straight correlation with the structural properties. The saturation magnetization is found to increase with the intensification of the heat treatment, and, therefore, with the increase of the density of induced defects. The magnetic behavior is fully explained in terms of the bound magnetic polaron model. Based on the experimental findings, supported by theoretical calculations, we attribute the origin of the observed defect-induced-ferromagnetism to the ferromagnetic coupling between the Co ions mediated by magnetic polarons due to zinc interstitial defects.

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preprint2012arXiv

Intrinsic Magnetism in Nanosheets of SnO$_{2}$: A First-principles Study

We propose intrinsic magnetism in nanosheets of SnO$_{2}$, based on first-principles calculations. The electronic structure and spin density reveal that $p$ orbitals of the oxygen atoms, surrounding Sn vacancies, have a non itinerant nature which gives birth to localized magnetism. A giant decrease in defect formation energies of Sn vacancies in nanosheets is observed. We, therefore, believe that native defects can be stabilized without any chemical doping. Nanosheets of different thicknesses are also studied, and it is found that it is easier to create vacancies, which are magnetic, at the surface of the sheets. SnO$_{2}$ nanosheets can, therefore, open new opportunities in the field of spintronics.

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preprint2011arXiv

Boron and nitrogen impurities in SiC nanoribbons: an ab initio investigation

Using ab initio calculations based on density-functional theory we have performed a theoretical investigation of substitutional boron and nitrogen impurities in silicon carbide (SiC) nanoribbons. We have considered hydrogen terminated SiC ribbons with zigzag and armchair edges. In both systems we verify that the boron and nitrogen atoms energetically prefer to be localized at the edges of the nanoribbons. However, while boron preferentially substitutes a silicon atom, nitrogen prefers to occupy a carbon site. In addition, our electronic-structure calculations indicate that (i) substitutional boron and nitrogen impurities do not affect the semiconducting character of the armchair SiC nanoribbons, and (ii) the half-metallic behavior of the zigzag nanoribbons is maintained in the presence of substitutional boron impurities. In contrast, nitrogen atoms occupying edge carbon sites transform half-metallic zigzag nanoribbons into metallic systems.

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preprint2011arXiv

Theoretical Study of Carbon Clusters in Silicon Carbide Nanowires

Using first-principles methods we performed a theoretical study of carbon clusters in silicon carbide nanowires. We examined small clusters with carbon interstitials and antisites in hydrogen-passivated SiC nanowires growth along the [100] and [111] directions. The formation energies of these clusters were calculated as a function of the carbon concentration. We verified that the energetic stability of the carbon defects in SiC nanowires depends strongly on the composition of the nanowire surface: the energetically most favorable configuration in carbon-coated [100] SiC nanowire is not expected to occur in silicon-coated [100] SiC nanowire. The binding energies of some aggregates were also obtained, and they indicate that the formation of carbon clusters in SiC nanowires is energetically favored.

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