Researcher profile

J. M. Hvam

J. M. Hvam contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2015arXiv

Magneto-phonon resonance in photoluminescence excitation spectra of magneto-excitons in GaAs/AlGaAs Superlattices

Strong increase in the intensity of the peaks of excited magneto-exciton (ME) states in the photoluminescence excitation (PLE) spectra recorded for the ground heavy-hole magneto-excitons (of the 1sHH type) has been found in a GaAs/AlGaAs superlattice in strong magnetic field B applied normal to the sample layers. While varying B the intensities of the PLE peaks have been measured as functions of energy separation $ΔE$ between excited ME peaks and the ground state of the system. The resonance profiles have been found to have maxima at $ΔE_{\rm max}$ close to the energy of the GaAs LO-phonon. However, the value of $ΔE_{\rm max}$ depends on quantum numbers of the excited ME state. The revealed very low quantum efficiency of the investigated sample allows us to ascribe the observed resonance to the enhancement of the non-radiative magneto-exciton relaxation rate arising due to LO-phonon emission. The presented theoretical model, being in a good agreement with experimental observations, provides a method to extract 1sHH magneto-exciton ``in-plane" dispersion from the dependence of $ΔE_{\rm max}$ on the excited ME state quantum numbers.

preprint2011arXiv

Build up of off-diagonal long-range order in microcavity exciton-polaritons across the parametric threshold

We report an experimental study of the spontaneous spatial and temporal coherence of polariton condensates generated in the optical parametric oscillator configuration, below and at the parametric threshold, and as a function of condensate area. Above the threshold we obtain very long coherence times (up to 3 ns) and a spatial coherence extending over the entire condensate (40 μm). The very long coherence time and its dependence on condensate area and pump power reflect the suppression of polariton-polariton interactions by an effect equivalent to motional narrowing.

preprint2010arXiv

Large quantum dots with small oscillator strength

We have measured the oscillator strength and quantum efficiency of excitons confined in large InGaAs quantum dots by recording the spontaneous emission decay rate while systematically varying the distance between the quantum dots and a semiconductor-air interface. The size of the quantum dots is measured by in-plane transmission electron microscopy and we find average in-plane diameters of 40 nm. We have calculated the oscillator strength of excitons of that size and predict a very large oscillator strength due to Coulomb effects. This is in stark contrast to the measured oscillator strength, which turns out to be much below the upper limit imposed by the strong confinement model. We attribute these findings to exciton localization in local potential minima arising from alloy intermixing inside the quantum dots.

preprint2010arXiv

On the interpretation of wave function overlaps in quantum dots

The spontaneous emission rate of excitons strongly confined in quantum dots is proportional to the overlap integral of electron and hole envelope wave functions. A common and intuitive interpretation of this result is that the spontaneous emission rate is proportional to the probability that the electron and the hole are located at the same point or region in space, i.e. they must coincide spatially to recombine. Here we show that this interpretation is not correct even loosely speaking. By general mathematical considerations we compare the envelope wave function overlap, the exchange overlap integral, and the probability of electrons and holes coinciding and find that the frequency dependence of the envelope wave function overlap integral is very different from that expected from the common interpretation. We show that these theoretical considerations lead to predictions for measurements. We compare our qualitative predictions with recent measurements of the wave function overlap and find good agreement.