Researcher profile

J. M. Gómez-Rodríguez

J. M. Gómez-Rodríguez contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2012arXiv

Role of pseudospin in quasiparticle interferences in epitaxial graphene probed by high-resolution scanning tunneling microscopy

Pseudospin, an additional degree of freedom related to the honeycomb structure of graphene, is responsible of many of the outstanding electronic properties found in this material. This article provides a clear understanding of how such pseudospin impacts the quasiparticle interferences of monolayer (ML) and bilayer (BL) graphene measured by low temperature scanning tunneling microscopy and spectroscopy. We have used this technique to map, with very high energy and space resolution, the spatial modulations of the local density of states of ML and BL graphene epitaxialy grown on SiC(0001), in presence of native disorder. We perform a Fourier transform analysis of such modulations including wavevectors up to unit-vectors of the reciprocal lattice. Our data demonstrate that the quasiparticle interferences associated to some particular scattering processes are suppressed in ML graphene, but not in BL graphene. Most importantly, interferences with 2qF wavevector associated to intravalley backscattering are not measured in ML graphene, even on the images with highest resolution. In order to clarify the role of the pseudospin on the quasiparticle interferences, we use a simple model which nicely captures the main features observed on our data. The model unambiguously shows that graphene's pseudospin is responsible for such suppression of quasiparticle interferences features in ML graphene, in particular for those with 2qF wavevector. It also confirms scanning tunneling microscopy as a unique technique to probe the pseudospin in graphene samples in real space with nanometer precision. Finally, we show that such observations are robust with energy and obtain with great accuracy the dispersion of the π-bands for both ML and BL graphene in the vicinity of the Fermi level, extracting their main tight binding parameters.

preprint2011arXiv

Point defects on graphene on metals

Understanding the coupling of graphene with its local environment is critical to be able to integrate it in tomorrow's electronic devices. Here we show how the presence of a metallic substrate affects the properties of an atomically tailored graphene layer. We have deliberately introduced single carbon vacancies on a graphene monolayer grown on a Pt(111) surface and investigated its impact in the electronic, structural and magnetic properties of the graphene layer. Our low temperature scanning tunneling microscopy studies, complemented by density functional theory, show the existence of a broad electronic resonance above the Fermi energy associated with the vacancies. Vacancy sites become reactive leading to an increase of the coupling between the graphene layer and the metal substrate at these points; this gives rise to a rapid decay of the localized state and the quenching of the magnetic moment associated with carbon vacancies in free-standing graphene layers.