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J. Kessler

J. Kessler contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2011arXiv

Magnetic Barriers and their q95 dependence at DIII-D

It is well known that externally generated resonant magnetic perturbations (RMPs) can form islands in the plasma edge. In turn, large overlapping islands generate stochastic fields, which are believed to play a role in the avoidance and suppression of edge localized modes (ELMs) at DIII-D. However, large coalescing islands can also generate, in the middle of these stochastic regions, KAM surfaces effectively acting as "barriers" against field-line dispersion and, indirectly, particle diffusion. It was predicted in [H. Ali and A. Punjabi, Plasma Phys. Control. Fusion 49 (2007), 1565-1582] that such magnetic barriers can form in piecewise analytic DIII-D plasma equilibria. In the present work, the formation of magnetic barriers at DIII-D is corroborated by field-line tracing calculations using experimentally constrained EFIT [L. Lao, et al., Nucl. Fusion 25, 1611 (1985)] DIII-D equilibria perturbed to include the vacuum field from the internal coils utilized in the experiments. According to these calculations, the occurrence and location of magnetic barriers depends on the edge safety factor q95. It was thus suggested that magnetic barriers might contribute to narrowing the edge stochastic layer and play an indirect role in the RMPs failing to control ELMs for certain values of q95. The analysis of DIII-D discharges where q95 was varied, however, does not show anti-correlation between barrier formation and ELM suppression.

preprint2010arXiv

Analysis of efficiency limiting processes in thin film Cu(In,Ga)(S,Se)2 electrodeposited solar cells

Electrodeposited thin film cells have been fabricated with record-breaking efficiencies of 11.4%. This presentation examines conversion mechanisms in cells with a focus on the effect of CdS buffer layers using a range of complementary tools. Dark currents (IVs) are well described by series and parallel resistances, and two dominant recombination mechanisms represented by parallel diodes. Measurements of IV as a function of temperature (IVT) allow extraction of activation energies corresponding to these processes and indicate their spatial position. Admittance spectroscopy (AS) gives an independent estimate of the same energies, and yields values of the defect densities of states in the forbidden gap. Two dominant levels are apparent, confirming the validity of the IV analysis. Spectral response (QE) measurements are presented, yielding information on minority carrier collection efficiency. The different methods of parameter extraction are correlated and indicate recombination levels some hundreds of meV above the valence band and below the conduction band. Bias dependence of admittance spectroscopy gives indications on the localisation of defect centres with one defect situated at the CdS heterointerface and the other in the bulk of the depletion region. The dark current analysis indicates that photogenerated minority carrier collection is the limiting factor in these cells at the operating bias.