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Source author record

J. K. Furdyna

J. K. Furdyna appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.dis-nncond-mat.stat-mech

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Published work

20 published item(s)

preprint2022arXiv

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Magnetization Saturation Process in the Magnonic Anti-dot Structures Based on (Ga,Mn)As: A Magnetometric Study

Applicability of dilute magnetic semiconductors (DMS) in electronic devices relies upon the understanding and control of their magnetic anisotropy. This paper explores one of the ways in engineering magnetic anisotropy in epitaxial layers of DMS by forming them into magnonic structures. For this purpose the canonical ferromagnetic DMS, namely (Ga,Mn)As, is employed. The anti-dot systems based on (Ga,Mn)As layers of various thicknesses are fabricated with focused ion beam apparatus and studied by means of microscopy as well as magnetometry. The magnetometric data - collected along two nonequivalent in-plane crystallographic directions of (Ga,Mn)As: [110] and [1-10] - shows the effect of structuring on high-field magnetization process, whereas no significant change of the width of hysteresis loop in anti-dot samples is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Signatures of four-particle correlations associated with exciton-carrier interactions in coherent spectroscopy on bulk GaAs

Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission energy that varies with the absorption energy, ranging from dispersive on the diagonal, through absorptive for low-energy interband transitions to dispersive with the opposite sign for interband transitions high above band gap. Simulations using a multilevel model augmented by many-body effects provide excellent agreement with the 2DFTS experiments and indicate that excitation-induced dephasing (EID) and excitation-induced shift (EIS) affect degenerate and nondegenerate interactions equivalently, with stronger exciton-carrier coupling relative to exciton-exciton coupling by approximately an order of magnitude. These simulations also indicate that EID effects are three times stronger than EIS in contributing to the coherent response of the semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Magnetization precession induced by quasi-transverse picosecond strain pulses in (311) ferromagnetic (Ga,Mn)As

Quasi-longitudinal and quasi-transverse picosecond strain pulses injected into a ferromagnetic (311) (Ga,Mn)As film induce dynamical shear strain in the film, thereby modulating the magnetic anisotropy and inducing resonant precession of the magnetization at a frequency ~10 GHz. The modulation of the out-of-plane magnetization component by the quasitransverse strain reaches amplitudes as large as 10% of the equilibrium magnetization. Our theoretical analysis is in good agreement with the observed results, thus providing a strategy for ultrafast magnetization control in ferromagnetic films by strain pulses.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Rapid diffusion of electrons in GaMnAs

We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a conduction-band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band

The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In this paper we combine results of channeling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-optical data to address this issue. Taken together, these measurements provide strong evidence that it is the location of the Fermi level within the impurity band that determines TC through determining the degree of hole localization. This finding differs drastically from the often accepted view that TC is controlled by valence band holes, thus opening new avenues for achieving higher values of TC.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Critical role of next-nearest-neighbor interlayer interaction in magnetic behavior of magnetic/nonmagnetic multilayers

We report magnetoresistance data in magnetic semiconductor multilayers, which exhibit a clear step-wise behavior as a function of external field. We attribute this highly non-trivial step-wise behavior to next-nearest-neighbor interlayer exchange coupling. Our microscopic calculation suggests that this next-nearest-neighbor coupling can be as large as 24% of the nearest-neighbor coupling. It is argued that such unusually long-range interaction is made possible by the quasi-one-dimensional nature of the system and by the long Fermi wavelength characteristic of magnetic semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Mechanical and Electronic Properties of Ferromagnetic GaMnAs Using Ultrafast Coherent Acoustic Phonons

Ultrafast two-color pump-probe measurements, involving coherent acoustic phonon (CAP) waves, have provided information simultaneously on the mechanical properties and on the electronic structure of ferromagnetic GaMnAs. The elastic constant C11 of Ga1-xMnxAs (0.03<x<0.07) are observed to be systematically smaller than those of GaAs. Both C11 and Vs of GaMnAs are found to increase with temperature (78 K<T<295 K), again in contrast to the opposite behavior in GaAs. In addition, the fundamental bandgap (at E0 critical point) of Ga1-xMnxAs is found to shift slightly to higher energies with Mn concentration.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Origin of Magnetic Circular Dichroism in GaMnAs: Giant Zeeman Splitting versus Spin Dependent Density of States

We present a unified interpretation of experimentally observed magnetic circular dichroism (MCD) in the ferromagnetic semiconductor (Ga,Mn)As, based on theoretical arguments, which demonstrates that MCD in this material arises primarily from a difference in the density of spin-up and spin-down states in the valence band brought about by the presence of the Mn impurity band, rather than being primarily due to the Zeeman splitting of electronic states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Response to the comment of K.W. Edmonds et al. on the article 'Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band'

Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Crossover critical behavior of Ga1-xMnxAs

The critical behavior of Ga1-xMnxAs in a close vicinity of the Curie temperature was experimentally studied by using the thermal diffusivity measurements. Taking into account that the inverse of the thermal diffusivity has the same critical behavior as the specific heat, the critical exponent α for the samples investigated has been determined. With approaching close to the critical temperature, the crossover from the mean-field-like to the Ising-like critical behavior has been observed. From the crossover behavior the values of the Ginzburg number and the exchange interaction length in Ga1-xMnxAs with different concentrations of Mn were determined.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Selective spin wave excitation in ferromagnetic (Ga,Mn)As layers by picosecond strain pulses

We demonstrate selective excitation of a spin wave mode in a ferromagnetic (Ga,Mn)As film by picosecond strain pulses. For a certain range of magnetic fields applied in the layer plane only a single frequency is detected for the magnetization precession. We explain this selectivity of spin mode excitation by the necessity of spatial matching of magnon and phonon eigenfunctions, which represents a selection rule analogous to momentum conservation for magnon-phonon interaction in bulk ferromagnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Theory of magnetization precession induced by a picosecond strain pulse in ferromagnetic semiconductor (Ga,Mn)As

A theoretical model of the coherent precession of magnetization excited by a picosecond acoustic pulse in a ferromagnetic semiconductor layer of (Ga,Mn)As is developed. The short strain pulse injected into the ferromagnetic layer modifies the magnetocrystalline anisotropy resulting in a tilt of the equilibrium orientation of magnetization and subsequent magnetization precession. We derive a quantitative model of this effect using the Landau-Lifshitz equation for the magnetization that is precessing in the time-dependent effective magnetic field. After developing the general formalism, we then provide a numerical analysis for a certain structure and two typical experimental geometries in which an external magnetic field is applied either along the hard or the easy magnetization axis. As a result we identify three main factors, which determine the precession amplitude: the magnetocrystalline anisotropy of the ferromagnetic layer, its thickness, and the strain pulse parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Time-resolved second harmonic generation study of buried semiconductor heterointerfaces using soliton-induced transparency

The transient second harmonic generation and linear optical reflectivity signals measured simultaneously in reflection from GaAs/GaSb/InAs and GaAs/GaSb heterostructures revealed a new mechanism for creating self-induced transparency in narrow bandgap semiconductors at low temperatures, which is based on the dual-frequency electro-optic soliton propagation. This allows the ultrafast carrier dynamics at buried semiconductor heterointerfaces to be studied.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Coherent magnetization precession in ferromagnetic (Ga,Mn)As induced by picosecond acoustic pulses

We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M, followed by the precession of M around its equilibrium orientation. This effect can be understood in terms of changes in magneto-crystalline anisotropy induced by the pulse. A model where only one anisotropy constant is affected by the strain pulse provides a good description of the observed time-dependent response.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ion-beam modification of the magnetic properties of GaMnAs epilayers

We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown GaMnAs films and decreasing even further the number of carriers, through a sequence of irradiation doses. We did a systematic study of magnetization as a function of temperature and of the irradiation ion dose. We also performed in-situ room temperature resistivity measurements as a function of the ion dose. We observe that both magnetic and transport properties of the samples can be experimentally manipulated by controlling the ion-beam parameters. For highly irradiated samples, the magnetic measurements indicate the formation of magnetic clusters together with a transition to an insulating state. The experimental data are compared with mean-field calculations for magnetization. The independent control of disorder and carrier density in the calculations allows further insight on the individual role of this two factors in the ion-beam-induced modification of GaMnAs.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Evidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field

Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then stored, most commonly, by encoding it in the orientation of magnetic domains of a computer hard disk. The key obstacle to a more intimate integration of magnetic materials into devices and circuit processing information is a lack of efficient means to control their magnetization. This is usually achieved with an external magnetic field or by the injection of spin-polarized currents. The latter can be significantly enhanced in materials whose ferromagnetic properties are mediated by charge carriers. Among these materials, conductors lacking spatial inversion symmetry couple charge currents to spin by intrinsic spin-orbit (SO) interactions, inducing nonequilibrium spin polarization tunable by local electric fields. Here we show that magnetization of a ferromagnet can be reversibly manipulated by the SO-induced polarization of carrier spins generated by unpolarized currents. Specifically, we demonstrate domain rotation and hysteretic switching of magnetization between two orthogonal easy axes in a model ferromagnetic semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Two-step model versus one-step model of the inter-polarization conversion and statistics of CdSe/ZnSe quantum dot elongations

The magneto-optical inter-polarization conversions by a layer of quantum dots have been investigated. Various types of polarization response of the sample were observed as a function of external magnetic field and of the orientation of the sample. The full set of experimental dependences is analyzed in terms of a one-step and a two-step model of spin evolution. The angular distribution of the quantum dots over the directions of elongation in the plane of the sample is taken into account in terms of the two models, and the model predictions are compared with experimental observations.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Optical Orientation of Excitons in CdSe Self-Assembled Quantum Dots

We study spin dynamics of excitons confined in self-assembled CdSe quantum dots by means of optical orientation in magnetic field. At zero field the exciton emission from QDs populated via LO phonon-assisted absorption shows a circular polarization of 14%. The polarization degree of the excitonic emission increases dramatically when a magnetic field is applied. Using a simple model, we extract the exciton spin relaxation times of 100 ps and 2.2 ns in the absence and presence of magnetic field, respectively. With increasing temperature the polarization of the QD emission gradually decreases. Remarkably, the activation energy which describes this decay is independent of the external magnetic field, and, therefore, of the degeneracy of the exciton levels in QDs. This observation implies that the temperature-induced enhancement of the exciton spin relaxation is insensitive to the energy level degeneracy and can be attributed to the same excited state distribution.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Optical response of a ferromagnetic/DMS hybrid structure

We investigate the possibility of using local magnetic fields to produce one-dimensional traps in hybrid structures for any quasiparticle possessing spin degree of freedom. We consider a system composed of a diluted magnetic semiconductor quantum well buried below a micron-sized ferromagnetic island. Localized magnetic field is produced by a rectangular ferromagnet in close proximity of a single domain phase. We make quantitative predictions for the optical response of the system as a function of distance between the micromagnet and the quantum well, electronic g-factor, and thickness of the micromagnet.

0 citations0 reviewsNo code linkedOpen access