Shape evolution of MBE grown SiGe structures on high index Si(5 5 12) surfaces: A temperature dependent study
The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature (RT) to 800C. Two modes of substrate heating i.e. radiative heating (RH) and direct current heating (DH) have been used. The post-growth characterization was carried out ex situ by scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (X-TEM) and Rutherford backscattering spectrometry (RBS). In the RH case, we found spherical island structures at 600C with a bimodal distribution and upon increasing temperature, the structures got faceted at 700C. At 800C thick ( 122nm) dome like structures are formed bounded by facets. While in the case of DC heating, after the optimum critical temperature 600C, well aligned trapezoidal SiGe structures with a graded composition starts forming along the step edges. Interestingly, these aligned structures have been found only around 600C, neither at low temperature nor at higher temperatures.