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J. H. Quilter

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Published work

6 published item(s)

preprint2016arXiv

Dynamic vibronic coupling in InGaAs quantum dots

The electron-phonon coupling in self-assembled InGaAs quantum dots is relatively weak at low light intensities, which means that the zero-phonon line in emission is strong compared to the phonon sideband. However, the coupling to acoustic phonons can be dynamically enhanced in the presence of an intense optical pulse tuned within the phonon sideband. Recent experiments have shown that this dynamic vibronic coupling can enable population inversion to be achieved when pumping with a blue-shifted laser and for rapid de-excitation of an inverted state with red detuning. In this paper we confirm the incoherent nature of the phonon-assisted pumping process and explore the temperature dependence of the mechanism. We also show that a combination of blue- and red-shifted pulses can create and destroy an exciton within a timescale ~20 ps determined by the pulse duration and ultimately limited by the phonon thermalisation time.

preprint2016arXiv

Ultrafast Depopulation of a Quantum Dot by LA-phonon-assisted Stimulated Emission

We demonstrate ultrafast incoherent depopulation of a quantum dot from above to below the transparency point using LA-phonon-assisted emission stimulated by a redshifted laser pulse. The QD is turned from a weakly vibronic system into a strongly vibronic one by laser driving which enables the phonon-assisted relaxation between the excitonic components of two dressed states. The depopulation is achieved within a laser pulse-width-limited time of 20 ps and exhibits a broad tuning range of a few meV. Our experimental results are well reproduced by path-integral calculations.

preprint2014arXiv

Phonon-assisted population inversion of a single quantum dot

We demonstrate an approach to realize the population inversion of a single InGaAs/GaAs quantum dot, which is driven by a laser pulse tuned within the neutral exciton phonon sideband. The inversion is achieved by rapid thermalization of the optically dressed states via phonon-assisted relaxation. A maximum exciton population of 0.67 $\pm$ 0.06 is measured for a laser tuned 0.83 meV to higher energy and the phonon sideband is mapped using a two-color pump-probe technique. Our experiments reveal that, in accordance with theory, the phonon-bath provides additional functionality for an optically driven quantum dot qubit.

preprint2013arXiv

Enhanced photocurrent readout for a quantum dot qubit by bias modulation

We demonstrate coherent control of a quantum dot exciton using photocurrent detection with a sinusoidal reverse bias. Optical control is performed at low bias, where tunneling-limited coherence times are long. Following this step, the tunneling rates are increased to remove the long-lived hole, achieving a high photocurrent signal. For a detection efficiency of 68%, electron and hole tunneling times during optical control of 200 ps and 20 ns can be achieved, compared to 120 ps and 7 ns for the constant bias case, respectively.

preprint2012arXiv

Coherent optical control of the spin of a single hole in a quantum dot

We demonstrate coherent optical control of a single hole spin confined to an InAs/GaAs quantum dot. A superposition of hole spin states is created by fast (10-100 ps) dissociation of a spin-polarized electron-hole pair. Full control of the hole-spin is achieved by combining coherent rotations about two axes: Larmor precession of the hole-spin about an external Voigt geometry magnetic field, and rotation about the optical-axis due to the geometric phase shift induced by a picosecond laser pulse resonant with the hole-trion transition.

preprint2012arXiv

Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field

The preparation of a coherent heavy-hole spin via ionization of a spin-polarized electron-hole pair in an InAs/GaAs quantum dot in a Voigt geometry magnetic field is investigated. For a dot with a 17 ueV bright-exciton fine-structure splitting, the fidelity of the spin preparation is limited to 0.75, with optimum preparation occurring when the effective fine-structure of the bright-exciton matches the in-plane hole Zeeman energy. In principle, higher fidelities can be achieved by minimizing the bright-exciton fine-structure splitting.