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J. H. Chu

J. H. Chu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2010arXiv

Electronic and magnetic properties of bilayer graphene with intercalated adsorption atoms C, N and O

We present an ab-initio density function theory to investigate the electronic and magnetic structures of the bilayer graphene with intercalated atoms C, N, and O. The intercalated atom although initially positioned at the middle site of the bilayer interval will finally be adsorbed to one graphene layer. Both N and O atoms favor the bridge site (i.e. above the carbon-carbon bonding of the lower graphene layer), while the C atom prefers the hollow site (i.e. just above a carbon atom of the lower graphene layer and simultaneously below the center of a carbon hexagon of the upper layer). Concerning the magnetic property, both C and N adatoms can induce itinerant Stoner magnetism by introducing extended or quasilocalized states around the Fermi level. Full spin polarization can be obtained in N-intercalated system and the magnetic moment mainly focuses on the N atom. In C-intercalated system, both the foreign C atom and some carbon atoms of the bilayer graphene are induced to be spin-polarized. N and O atoms can easily get electrons from carbon atoms of bilayer graphene, which leads to Fermi level shifting downward to valence band and thus producing the metallic behavior in bilayer graphene.

preprint2010arXiv

Weak field magnetoresistance of narrow-gap semiconductor InSb

The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature and the Nyquist mechanism dominates decoherence. The two dimensionality is also verified further and the influence of roughness effect and Zeeman effect on weak antilocalization effect is studied by systematically investigating the anisotropy of weak field magnetoresistance with respect to magnetic field. It is also found that the existence of in-plane field can effectively suppress the weak antilocalization effect of InSb film and the roughness effect plays an important role in the anisotropy.