Researcher profile

J. E. Barrios-Vargas

J. E. Barrios-Vargas contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - Baseline
4works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2020arXiv

Effective magnetic field induced by inhomogeneous Fermi velocity in strained honeycomb structures

In addition to the known pseudomagnetic field, nonuniform strains independently induce a position-dependent Fermi velocity (PDFV) in graphene. Here we demonstrate that, due to the presence of a PDFV, the Dirac fermions on a nonuniform (strained) honeycomb lattice may experiment a sort of magnetic effect, which is linearly proportional to the momentum of the quasiparticle. As a consequence, the quasiparticles have a sublinear dispersion relation. Moreover, we analyze the general consequence of a PDFV on the Klein tunneling of electrons through pseudomagnetic barriers. In particular, we report an anomalous (Klein) tunneling for an electron passing across velocity barriers with magnetic features. Our findings about the effects induced by a PDFV on Dirac fermions in (2D) strained honeycomb lattice could be extended to (3D) Dirac and Weyl semimetals and/or its analogous artificial systems.

preprint2013arXiv

Electron localization in disordered graphene: multifractal properties of the wavefunctions

An analysis of the electron localization properties in doped graphene is performed by doing a numerical multifractal analysis. By obtaining the singularity spectrum of a tight-binding model, it is found that the electron wave functions present a multifractal behavior. Such multifractality is preserved even for second neighbor interaction, which needs to be taken into account if a comparison is desired with experimental results. States close to the Dirac point have a wider multifractal character than those far from this point as the impurity concentration is increased. The analysis of the results allows to conclude that in the split-band limit, where impurities act as vacancies, the system can be well described by a chiral orthogonal symmetry class, with a singularity spectrum transition approaching freezing as disorder increases. This also suggests that in doped graphene, localization is in contrast with the conventional picture of Anderson localization in two dimensions, showing also that the common belief of the absence of quantum percolation in two dimensional systems needs to be revised.

preprint2012arXiv

Critical wave functions in disordered graphene

In order to elucidate the presence of non-localized states in doped graphene, an scaling analysis of the wave function moments known as inverse participation ratios is performed. The model used is a tight- binding hamiltonian considering nearest and next-nearest neighbors with random substitutional impurities. Our findings indicate the presence of non-normalizable wave functions that follow a critical (power-law) decay, which are between a metallic and insulating behavior. The power-law exponent distribution is robust against the inclusion of next-nearest neighbors and on growing the system size.

preprint2011arXiv

Electrical conductivity and resonant states of doped graphene considering next-nearest neighbor interaction

The next-nearest neighbor interaction (NNN) is included in a tight-binding calculation of the electronic spectrum and conductivity of doped graphene. As a result, we observe a wide variation of the conductivity behavior, since the Fermi energy and the resonance peak are not shifted by the same amount. Such effect can have a profound effect in the idea of explaining the minimal conductivity of graphene as a consequence of impurities or defects. Finally, we also estimate the mean free path and relaxation time due to resonant impurity scattering.