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Researcher profile

J. Debus

J. Debus contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2016arXiv

Optical orientation of hole magnetic polarons in (Cd,Mn)Te/(Cd,Mn,Mg)Te quantum wells

The optically induced spin polarization in (Cd,Mn)Te/(Cd,Mn,Mg)Te diluted-magnetic-semiconductor quantum wells is investigated by means of picosecond pump-probe Kerr rotation. At 1.8 K temperature, additionally to the oscillatory signals from photoexcited electrons and Manganese spins precessing about an external magnetic field, a surprisingly long-lived (up to 60 ns) nonoscillating spin polarization is detected. This polarization is related to optical orientation of equilibrium magnetic polarons involving resident holes. The suggested mechanism for the optical orientation of the equilibrium magnetic polarons indicates that the detected polaron dynamics originates from unexcited magnetic polarons. The polaron spin dynamics is controlled by the anisotropic spin structure of the heavy-hole resulting in a freezing of the polaron magnetic moment in one of the two stable states oriented along the structure growth axis. Spin relaxation between these states is prohibited by a potential barrier, which depends on temperature and magnetic field. The magnetic polaron relaxation is accelerated with increasing temperature and in magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure

Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wave function overlap and is therefore short-ranged, so that it may be compromised across the interface. Here we study a hybrid structure consisting of a ferromagnetic Co-layer and a semiconducting CdTe quantum well, separated by a thin (Cd,Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wave function overlap of quantum well holes and magnetic Co atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 10 nm. We suggest that the resulting spin polarization of the holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-flip Raman scattering of the $Γ$-X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots

The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $Γ$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron $g$ factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of $Γ$-X-valley mixing, as evidenced by both experiment and theory.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-flip Raman scattering of the neutral and charged excitons confined in a CdTe/(Cd,Mg)Te quantum well

Spin-flip Raman scattering of electrons and heavy-holes is studied for resonant excitation of neutral and charged excitons in a CdTe/Cd$_{0.63}$Mg$_{0.37}$Te quantum well. The spin-flip scattering is characterized by its dependence on the incident and scattered light polarization as well as on the magnetic field strength and orientation. Model schemes of electric-dipole allowed spin-flip Raman processes in the exciton complexes are compared to the experimental observations, from which we find that lowering of the exciton symmetry, time of carrier spin relaxation, and mixing between electron states and, respectively, light- and heavy-hole states play an essential role in the scattering. At the exciton resonance, anisotropic exchange interaction induces heavy-hole spin-flip scattering, while acoustic phonon interaction is mainly responsible for the electron spin-flip. In resonance with the positively and negatively charged excitons, anisotropic electron-hole exchange as well as mixed electron states allow spin-flip scattering. Variations in the resonant excitation energy and lattice temperature demonstrate that localization of resident electrons and holes controls the Raman process probability and is also responsible for symmetry reduction. We show that the intensity of the electron spin-flip scattering is strongly affected by the lifetime of the exciton complex and in tilted magnetic fields by the angular dependence of the anisotropic electron-hole exchange interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Raman studies on a heavily distorted polycarbonate sample - Raman-Untersuchungen an einer stark deformierten Polycarbonat-Probe

Differently distorted areas on a polycarbonate sample are studied by means of Raman spectroscopy. The various Raman lines, whose energy shifts range between 200 and 3200 cm-1, are compared for different sample positions with respect to their spectral position, intensity and line width. While a double bonding does not indicate a change in the structural characteristics of the distorted polycarbonate, CH-stretching modes show strong Raman intensity differences induced by mechanical stress. Experimental setup modifications are outlooked. Eine Polycarbonat-Probe wird an unterschiedlich stark deformierten Stellen mittels Raman-Spektroskopie untersucht. Die verschiedenen Raman-Linien mit Raman-Verschiebungen in einem Bereich von 200 bis 3200 cm-1 werden fuer die unterschiedlichen Probenstellen hinsichtlich ihrer spektralen Position, Intensitaet und Breite verglichen. Aus den experimentellen Resultaten geht hervor, dass Doppelbindungen nur unzureichend als Indikator fuer strukturelle Veraenderungen innerhalb des deformierten Polycarbonats dienen. Hingegen zeigen CH-Streckungen deutliche Raman-Intensitaetsunterschiede in Abhaengigkeit von dem Polycarbonat-Verspannungsgrad. Ein Ausblick auf experimentelle Erweiterungen wird gegeben.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Raman studies on amorphous carbon layers - Raman-Untersuchungen von amorphen Kohlenstoffschichten

Raman spectroscopic study of amorphous carbon layers for two different excitation wavelengths at room temperature. The amount of sp3 bondings is estimated to about 10% for both samples, evaluated from the ratio of the D- and G-Raman line intensities. The properties of the bondings in the two samples are discussed. Raman-spektroskopische Untersuchungen von amorphen Kohlenstoffschichten fuer zwei unterschiedliche Anregungswellenlaengen bei Raumtemperatur. Der sp3-Bindungsanteil is zu 10% fuer beide Proben bestimmt worden, ermittelt aus dem Intensitaetsverhaeltnis der D- and G-Raman-Linien. Die Eigenschaften der Bindungen in den beiden untersuchten Proben werden diskutiert.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Influence of the heterointerface sharpness on exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap

The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical model calculations reveal a strong dependence of the exciton lifetime on the thickness of the interface diffusion layer. The lifetime of excitons with a particular optical transition energy varies because this energy is obtained for quantum dots differing in size, shape and composition. The different exciton lifetimes, which result in photoluminescence with non-exponential decay obeying a power-law function, can be described by a phenomenological distribution function, which allows one to explain the photoluminescence decay with one fitting parameter only.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin diffusion in the Mn2+ ion system of II-VI diluted magnetic semiconductor heterostructures

The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te has been studied experimentally by optical methods and simulated numerically. In the samples with nonhomogeneous magnetic ion distribution this dynamics is contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. The spin diffusion coefficient of 7x10^(-8) cm^2/s has been evaluated for Zn(0.99)Mn(0.01)Se from comparison of experimental and numerical results. Calculations of the giant Zeeman splitting of the exciton states and the magnetization dynamics in the ordered alloys and parabolic quantum wells fabricated by the digital growth technique show perfect agreement with the experimental data. In both structure types the spin diffusion has an essential contribution to the magnetization dynamics.

0 citations0 reviewsNo code linkedOpen access