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J. C. Zhang

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astro-ph.HE cond-mat.mes-hall

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preprint2020arXiv

SN 2018hti: a nearby superluminous supernova discovered in a metal-poor galaxy

SN 2018hti is a Type I superluminous supernova (SLSN~I) with an absolute $g$ -band magnitude of $-22.2$ at maximum brightness, discovered in a metal-poor galaxy at a redshift of 0.0612. We present extensive photometric and spectroscopic observations of this supernova, covering the phases from $\sim -35$ days to more than +340 days from the $r$ -band maximum. Combining our $BVgri$ -band photometry with {\it Swift} UVOT optical/ultraviolet photometry, we calculated the peak luminosity as $\sim 3.5\times10^{44}$ erg s $^{-1}$ . Modeling the observed light curve reveals that the luminosity evolution of SN 2018hti can be produced by an ejecta mass of 5.8 $M_\odot$ and a magnetar with a magnetic field of $B=1.8\times10^{13}$ ~G having an initial spin period of $P_0=1.8$ ms. Based on such a magnetar-powered scenario and a larger sample, a correlation between the spin of the magnetar and the kinetic energy of the ejecta can be inferred for most SLSNe~I, suggesting a self-consistent scenario. Like for other SLSNe~I, the host galaxy of SN 2018hti is found to be relatively faint ( $M_{g} = -17.75$ mag) and of low metallicity ( $Z=0.3~Z_\odot$ ), with a star-formation rate of 0.3 $M_\odot$ yr $^{-1}$ . According to simulation results of single-star evolution, SN 2018hti could originate from a massive, metal-poor star with a zero-age main sequence (ZAMS) mass of 25--40 $M_\odot$ , or from a less massive rotating star with $M_\mathrm{ZAMS} \approx 16$ --25 $M_\odot$ . For the case of a binary system, its progenitor could also be a star with $M_\mathrm{ZAMS} \gtrsim 25$ $M_\odot$ .

preprint2015arXiv

Orientation and strain modulated electronic structures in puckered arsenene nanoribbons

Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons can successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the nanoribbons also induces a direct bandgap and simultaneously modulates effectively the transport property. The gap energy is largely enhanced by applying tensile strains to the armchair structures. In the zigzag ones, a tensile strain makes the effective mass of holes much higher while a compressive strain cause it much lower than that of electrons. Our results are crutial to understand and engineer the electronic properties of two dimensional materials beyond the planar ones like graphene.

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