Researcher profile

J. -C. Rojas-Sanchez

J. -C. Rojas-Sanchez contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Velocity asymmetry of Dzyaloshinskii domain walls in the creep and flow regimes

We have carried out measurements of domain wall dynamics in a Pt/Co/GdOx(t) wedge sample with perpendicular magnetic anisotropy. When driven by an easy-axis field Hz in the presence of an in-plane field Hx, the domain wall expansion along x is anisotropic, as expected for samples presenting Dzyaloshinskii-Moriya interaction. In the creep regime, the sign and the value of the domain wall velocity asymmetry changes along the wedge. We show that in our samples the domain wall speed vs. Hx curves in the creep regime cannot be explained simply in terms of the variation of the domain wall energy with Hx, as suggested by previous works. For this reason the strength and the sign of the Dzyaloshinskii-Moriya interaction (DMI) cannot be extracted from these measurements. To obtain reliable information on the DMI strength using magnetic field-induced domain wall dynamics, measurements have been performed with high fields, bringing the DW close to the flow regime of propagation. In this case, the large values of DMI are coherent with those obtained from current-driven domain wall dynamics.

preprint2013arXiv

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.