Researcher profile

J. Barnard

J. Barnard contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

Measurements of the Secondary Electron Emission from Rare Gases at 4.2K

Dependence of the secondary electron yield (SEY) from the primary beam incident energy and the coverage has been measured for neon, argon, krypton and xenon condensed on a target at 4.2K. The beam energy ranged between 100 eV and 3 keV, the maximal applied coverage have made up 12000, 4700, 2500 and 1400 monolayers correspondingly for neon, argon, krypton and xenon. The SEY results for these coverages can be considered as belonging only to investigated gases without influence of the target material. The SEY dependencies versus the primary beam energy for all gases comprise only an ascending part and therefore, the maximal measured SEY values have been obtained for the beam energy of 3keV and have made up 62, 73, 60.5 and 52 for neon, argon, krypton and xenon correspondingly. Values of the first cross-over have made up 21 eV for neon, 14 eV for argon, 12.5 eV for krypton and 10.5 eV for xenon. An internal field appearing across a film due to the beam impact can considerably affect the SEY measurements that demanded the beam current to be reduced till 9.0E-10A. Duration of the beam impact varied between 500 μsec and 250 μsec. It was found that reliable SEY measurements can also be taken on a charged surface if the charge was acquired due to beam impact with electrons of higher energy. All SEY measurements for once applied coverage have been carried out for whole range of incident energies from 3 keV down to 100 eV without renewing the film. Developing of pores inside of a deposited film can significantly increase the SEY as it was observed during warming up the target.

preprint2013arXiv

Measurements of the Secondary Electron Emission of Some Insulators

Charging up the surface of an insulator after beam impact can lead either to reverse sign of field between the surface and collector of electrons for case of thick sample or appearance of very high internal field for thin films. Both situations discard correct measurements of secondary electron emission (SEE) and can be avoided via reducing the beam dose. The single pulse method with pulse duration of order of tens microseconds has been used. The beam pulsing was carried out by means of an analog switch introduced in deflection plate circuit which toggles its output between "beam on" and "beam off" voltages depending on level of a digital pulse. The error in measuring the beam current for insulators with high value of SEE was significantly reduced due to the use for this purpose a titanium sample having low value of the SEE with DC method applied. Results obtained for some not coated insulators show considerable increase of the SEE after baking out at 3500C what could be explained by the change of work function. Titanium coatings on alumina exhibit results close to the ones for pure titanium and could be considered as an effective antimultipactor coating.