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J. B. S. Mendes

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2 publications

preprint2020arXiv

Unveiling the polarity of the spin-to-charge current conversion in Bi2Se3Bi_2Se_3

We report an investigation of the spin- to charge-current conversion in sputter-deposited films of topological insulator Bi2Se3Bi_2Se_{3} onto single crystalline layers of YIG (Y3Fe5O12)(Y_{3}Fe_{5}O_{12}) and polycrystalline films of Permalloy (Py=Ni81Fe19)(Py = Ni_{81}Fe_{19}). Pure spin current was injected into the Bi2Se3Bi_{2}Se_{3} layer by means of the spin pumping process in which the spin precession is obtained by exciting the ferromagnetic resonance of the ferromagnetic film. The spin-current to charge-current conversion, occurring at the Bi2Se3/Bi_{2}Se_{3}/ferromagnet interface, was attribute to the inverse Rashba-Edelstein effect (IREE). By analyzing the data as a function of the Bi2Se3Bi_{2}Se_{3} thickness we calculated the IREE length used to characterize the efficiency of the conversion process and found that 1.2 pm ≤∣λIREE∣≤\leq|λ_{IREE}|\leq 2.2 pm. These results support the fact that the surface states of Bi2Se3Bi_{2}Se_{3} have a dominant role in the spin-charge conversion process, and the mechanism based on the spin diffusion process plays a secondary role. We also discovered that the spin- to charge-current mechanism in Bi2Se3Bi_{2}Se_{3} has the same polarity as the one in Ta, which is the opposite to the one in Pt. The combination of the magnetic properties of YIG and Py, with strong spin-orbit coupling and dissipationless surface states topologically protected of Bi2Se3Bi_{2}Se_{3} might lead to spintronic devices with fast and efficient spin-charge conversion.

preprint2015arXiv

Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly-doped silicon substrates

In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly-doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the sweeping applied field in order to understand the spin dynamics in the as-produced samples. The observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. The results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples.

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