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Ivan Shorubalko

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cond-mat.mes-hall

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preprint2021arXiv

Optimized Graphene Electrodes for contacting Graphene Nanoribbons

Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes.

preprint2016arXiv

Understanding the interaction between energetic ions and freestanding graphene towards practical 2D perforation

We report experimentally and theoretically the behavior of freestanding graphene subject to bombardment of energetic ions, investigating the ability of large-scale patterning of freestanding graphene with nanometer sized features by focused ion beam technology. A precise control over the He+ and Ga+ irradiation offered by focused ion beam techniques enables to investigate the interaction of the energetic particles and graphene suspended with no support and allows determining sputter yields of the 2D lattice. We find strong dependency of the 2D sputter yield on the species and kinetic energy of the incident ion beams. Freestanding graphene shows material semi-transparency to He+ at high energies (10-30 keV) allowing the passage of >97% He+ particles without creating destructive lattice vacancy. Large Ga+ ions (5-30 keV), in contrast, collide far more often with the graphene lattice to impart significantly higher sputter yield of ~50%. Binary collision theory applied to monolayer and few-layer graphene can successfully elucidate this collision mechanism, in great agreement with experiments. Raman spectroscopy analysis corroborates the passage of a large fraction of He+ ions across graphene without much damaging the lattice whereas several colliding ions create single vacancy defects. Physical understanding of the interaction between energetic particles and suspended graphene can practically lead to reproducible and efficient pattern generation of unprecedentedly small features on 2D materials by design, manifested by our perforation of sub-5-nm pore arrays. This capability of nanometer scale precision patterning of freestanding 2D lattices shows practical applicability of the focused ion beam technology to 2D material processing for device fabrication and integration.