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Isabelle Berbezier

Isabelle Berbezier contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Self-organized Kagome-lattice in a metal-organic monolayer

We report on the successful on-surface synthesis of metal-organic covalent coordination networks with a dense Kagome lattice of metallic centers. In the case of Mn centers ab-initio calculations show that the adsorbed monolayer on Ag(111) has all the characteristic features of a strictly two-dimensional (2D) ferromagnetic Kagome metal. Tetrahydroxyquinone (THQ) and metal atoms (M=Cu or Mn) are co-deposited on the Ag(111) substrate to build well-ordered 2D lattices M$_3$C$_6$O$_6$. The surface is studied by scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS) to optimize the growth conditions like fluxes and temperatures. The details of the atomic, electronic and magnetic structures are clarified by density functional theory (DFT) calculations. XPS and DFT reveal a Cu$^+$ charge state and no local magnetic moments for the Cu-organic network. For the Mn-organic network, we find the charge state Mn$^{2+}$ and a local spin S=5/2. Charge transfer stabilizes the Cu$^+$ and Mn$^{2+}$ charge states. We find two different modifications of the M$_3$C$_6$O$_6$ lattice. DFT calculations which neglect the small spin-orbit coupling show a Dirac point, i.e. a band crossing with linear electron dispersion at the K-point of the Brillouin zone. This Dirac point is at the Fermi level if there is no charge transfer but drops by 100 meV if electron doping of Cu$_3$C$_6$O$_6$ on Ag(111) surface is acknowledged. We predict the magnetic couplings of an isolated M$_3$C$_6$O$_6$ monolayer to be short range and antiferromagnetic leading to high frustration at the Kagome lattice and a tendency towards a spin-liquid ground state. In the case of hole transfer from the substrates ferromagnetic ordering is introduced, making M$_3$C$_6$O$_6$ an interesting candidate for the quantum anomalous Hall effect.

preprint2022arXiv

Van der Waals heteroepitaxy of air stable quasi-free standing silicene layers on CVD epitaxial graphene/6H-SiC

Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers, e.g. turning the layer-by-layer growth into the Volmer-Weber growth promoted by defect-assisted nucleation. In this work, the growth of silicon on chemical vapor deposited epitaxial Gr (1 ML Gr/1ML Gr buffer) on 6H-SiC(0001) substrate is investigated by a combination of atomic force microscopy (AFM), scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and Raman spectroscopy measurements. It is shown that the perfect control of full-scale almost defect-free 1 ML Gr with a single surface structure and the ultra-clean conditions for molecular beam epitaxy (MBE) deposition of silicon represent key prerequisites for ensuring the growth of extended silicene sheets on epitaxial graphene.

preprint2021arXiv

Hydrogen-mediated CVD epitaxy of Graphene on SiC: growth mechanism and atomic configuration

Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering applications in microelectronics. With this study we shed light on the generic mechanism which produces the coexistence of two different types of Gr domains, whose proportion can be carefully controlled by tuning the H2 flow rate. For the first time, we show that the growth of Gr using CVD under H2/Ar flow rate proceeds in two stages. Firstly, the nucleation of free-standing epitaxial graphene on hydrogen (H-Gr) occurs, then H-atoms eventually desorb from either step edges or defects. This gives rise, for H2 flow rate below a critical value, to the formation of (6x6)Gr domains on 6H-SiC(0001). The front of H-desorption progresses proportionally to the reduction of H2. Using a robust and generic X-ray photoelectron spectroscopy (XPS) analysis, we realistically quantify the proportions of H-Gr and (6x6)Gr domains of a Gr film synthetized in any experimental conditions. Scanning tunnelling microscopy supports the XPS measurements. From these results we can deduce that the H- assisted CVD growth of Gr developed here is a unique method to grow fully free-standing H-Gr on the contrary to the method consisting of H-intercalation below epitaxial Gr on buffer layer. These results are of crucial importance for future applications of Gr/SiC(0001) in nanoelectronics, providing the groundwork for the use of Gr as an optimal template layer for Van der Waals homo- and hetero-epitaxy.