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Isabella Gierz

Isabella Gierz appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

10 published item(s)

preprint2016arXiv

Electronic-structural Dynamics in Graphene

We review our recent time- and angle-resolved photoemission spectroscopy experiments, which measure the transient electronic structure of optically driven graphene. For pump photon energies in the near infrared ($\hbarω_{\text{pump}}=950$meV) we have discovered the formation of a population-inverted state near the Dirac point, which may be of interest for the design of THz lasing devices and optical amplifiers. At lower pump photon energies ($\hbarω_{\text{pump}}<400$meV), for which interband absorption is not possible in doped samples, we find evidence for free carrier absorption. In addition, when mid-infrared pulses are made resonant with an infrared-active in-plane phonon of bilayer graphene ($\hbarω_{\text{pump}}=200$meV), a transient enhancement of the electron-phonon coupling constant is observed, providing interesting perspective for experiments that report light-enhanced superconductivity in doped fullerites in which a similar lattice mode was excited. All the studies reviewed here have important implications for applications of graphene in optoelectronic devices and for the dynamical engineering of electronic properties with light.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Probing carrier dynamics in photo-excited graphene with time-resolved ARPES

The dynamics of photo-generated electron-hole pairs in solids are dictated by many-body interactions such as electron-electron and electron-phonon scattering. Hence, understanding and controlling these scattering channels is crucial for many optoelectronic applications, ranging from light harvesting to optical amplification. Here we measure the formation and relaxation of the photo-generated non-thermal carrier distribution in monolayer graphene with time- and angle-resolved photoemission spectroscopy. Using sub 10fs pulses we identify impact ionization as the primary scattering channel, which dominates the dynamics for the first 25fs after photo-excitation. Auger recombination is found to set in once the carriers have accumulated at the Dirac point with time scales between 100 and 250fs, depending on the number of non-thermal carriers. Our observations help in gauging graphene's potential as a solar cell and TeraHertz lasing material.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Phonon-pump XUV-photoemission-probe in graphene: evidence for non-adiabatic heating of Dirac carriers by lattice deformation

We modulate the atomic structure of bilayer graphene by driving its lattice at resonance with the in-plane E1u lattice vibration at 6.3um. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES) with extreme ultra-violet (XUV) pulses, we measure the response of the Dirac electrons near the K-point. We observe that lattice modulation causes anomalous carrier dynamics, with the Dirac electrons reaching lower peak temperatures and relaxing at faster rate compared to when the excitation is applied away from the phonon resonance or in monolayer samples. Frozen phonon calculations predict dramatic band structure changes when the E1u vibration is driven, which we use to explain the anomalous dynamics observed in the experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Population Inversion in Monolayer and Bilayer Graphene

The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxation time of only ~ 130 femtoseconds. This severely limits the applicability of single layer graphene to, for example, Terahertz light amplification. Here we use tr-ARPES to demonstrate long-lived population inversion in bilayer graphene. The effect is attributed to the small band gap found in this compound. We propose a microscopic model for these observations and speculate that an enhancement of both the pump photon energy and the pump fluence may further increase this lifetime.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Snapshots of non-equilibrium Dirac carrier distributions in graphene

The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization has been discussed in the context of light harvesting applications. However, all these effects are difficult to test quantitatively by measuring the transient optical properties alone, as these only indirectly reflect the energy and momentum dependent carrier distributions. Here, we use time- and angle-resolved photoemission spectroscopy with femtosecond extreme ultra-violet (EUV) pulses at 31.5 eV photon energy to directly probe the non-equilibrium response of Dirac electrons near the K-point of the Brillouin zone. In lightly hole-doped epitaxial graphene samples, we explore excitation in the mid- and near-infrared, both below and above the minimum photon energy for direct interband transitions. While excitation in the mid-infrared results only in heating of the equilibrium carrier distribution, interband excitations give rise to population inversion, suggesting that terahertz lasing may be possible. However, in neither excitation regime do we find indication for carrier multiplication, questioning the applicability of graphene for light harvesting. Time-resolved photoemission spectroscopy in the EUV emerges as the technique of choice to assess the suitability of new materials for optoelectronics, providing quantitatively accurate measurements of non-equilibrium carriers at all energies and wavevectors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin and angular resolved photoemission experiments on epitaxial graphene

Our recently reported spin and angular resolved photoemission (SARPES) results on an epitaxial graphene monolayer on SiC(0001) suggested the presence of a large Rashba-type spin splitting of Δk=(0.030+-0.005)1/A [1]. Although this value was orders of magnitude larger than predicted theoretically, it could be reconciled with the line width found in conventional spin-integrated high resolution angular resolved photoemission spectroscopy (ARPES) data. Here we present novel measurements for a hydrogen intercalated quasi free-standing graphene monolayer on SiC(0001) that reveal a spin polarization signal that - when interpreted in terms of the Rashba-Bychkov effect [2,3] - corresponds to a spin splitting of Δk=(0.024+-0.005)1/A. This splitting is significantly larger than the half width at half maximum of spin-integrated high resolution ARPES measurements which is a strong indication that the measured polarization signal does not originate from a Rashba-type spin splitting of the graphene pi-bands as we suggested in our previous report [1].

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility considerably. We show that it is possible to decouple the partially sp3-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp2-hybridized graphene layer with improved electronic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Illuminating the dark corridor in graphene: polarization dependence of angle-resolved photoemission spectroscopy on graphene

We have used s- and p-polarized synchrotron radiation to image the electronic structure of epitaxial graphene near the K-point by angular resolved photoemission spectroscopy (ARPES). Part of the experimental Fermi surface is suppressed due to the interference of photoelectrons emitted from the two equivalent carbon atoms per unit cell of graphene's honeycomb lattice. Here we show that by rotating the polarization vector, we are able to illuminate this 'dark corridor' indicating that the present theoretical understanding is oversimplified. Our measurements are supported by first-principles photoemission calculations, which reveal that the observed effect persists in the low photon energy regime.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The Structural Influence on the Rashba-type Spin-Splitting in Surface Alloys

The Bi/Ag(111), Pb/Ag(111), and Sb/Ag(111) surface alloys exhibit a two-dimensional band structure with a strongly enhanced Rashba-type spin-splitting, which is in part attributed to the structural asymmetry resulting from an outward relaxation of the alloy atoms. In order to gain further insight into the spin-splitting mechanism, we have experimentally determined the outward relaxation of the alloy atoms in these surface alloys using quantitative low-energy electron diffraction (LEED). The structure plays an important role in the size of the spinsplitting as it dictates the potential landscape, the symmetry as well as the orbital character. Furthermore, we discuss the band ordering of the Pb/Ag(111) surface alloy as well as the reproducible formation of Sb/Ag(111) surface alloys with unfaulted (face-centered cubic) and faulted (hexagonally close-packed) toplayer stacking.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tuning the spin texture in binary and ternary surface alloys on Ag(111)

Recently, a giant spin splitting has been observed in surface alloys on noble metal (111) surfaces as a result of a strong structural modification at the surface as well as the large atomic spin-orbit interaction (SOI) of the alloy atoms. These surface alloys are an ideal playground to manipulate both the size of the spin splitting as well as the position of the Fermi level as it is possible to change the atomic SOI as well as the relaxation by varying alloy atoms and substrates. Using spin- and angle-resolved photoemission spectroscopy in combination with quantitative low energy electron diffraction we have studied the mixed binary Bi(x)Sb(1-x)/Ag(111) and the mixed ternary Bi(x)Pb(y)Sb(1-x-y)/Ag(111) surface alloys where we observed a continuous evolution of the band structure with x and y.

0 citations0 reviewsNo code linkedOpen access