Researcher profile

Irene Suarez-Martinez

Irene Suarez-Martinez contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Graphite forms via annihilation of screw dislocations

Graphite is the thermodynamically stable form of carbon, and yet is remarkably difficult to synthesise. A key step in graphite formation is the removal of defects at high temperature ($>$2300~$^{\circ}$C) that allow graphenic fragments to rearrange into ordered crystallites. We find the critical defect controlling graphitisation is a screw dislocation that winds through the layers like a spiral staircase, inhibiting lateral growth of the graphenic crystallites ($L_a$) and preventing AB stacking of Bernal graphite. High-resolution transmission electron microscopy (HRTEM) identifies screws as interdigitated fringes with narrow focal depth in graphitising polyvinyl chloride (PVC). Molecular dynamics simulations of parallel graphenic fragments confirm that screws spontaneously form during heating, with higher annealing temperature driving screw annihilation and crystallite growth. The time evolution of graphitisation is tracked via X-ray diffraction (XRD), showing the growth of $L_a$ and reduction of the interlayer spacing consistent with molecular dynamics of screw annihilation. This mechanistic insight raises opportunities to lower the barrier for graphitisation as well as broadening the range of carbonaceous materials that can turn into graphite, thereby lowering the cost of synthetic graphite used in lithium-ion batteries, carbon fibre, and electrodes for smelting.

preprint2012arXiv

A comparative study of density functional and density functional tight binding calculations of defects in graphene

The density functional tight binding approach (DFTB) is well adapted for the study of point and line defects in graphene based systems. After briefly reviewing the use of DFTB in this area, we present a comparative study of defect structures, energies and dynamics between DFTB results obtained using the dftb+ code, and density functional results using the localised Gaussian orbital code, AIMPRO. DFTB accurately reproduces structures and energies for a range of point defect structures such as vacancies and Stone-Wales defects in graphene, as well as various unfunctionalised and hydroxylated graphene sheet edges. Migration barriers for the vacancy and Stone-Wales defect formation barriers are accurately reproduced using a nudged elastic band approach. Finally we explore the potential for dynamic defect simulations using DFTB, taking as an example electron irradiation damage in graphene.

preprint2012arXiv

Graphene edge structures: Folding, scrolling, tubing, rippling and twisting

Conventional three-dimensional crystal lattices are terminated by surfaces, which can demonstrate complex rebonding and rehybridisation, localised strain and dislocation formation. Two dimensional crystal lattices, of which graphene is the archetype, are terminated by lines. The additional available dimension at such interfaces opens up a range of new topological interface possibilities. We show that graphene sheet edges can adopt a range of topological distortions depending on their nature. Rehybridisation, local bond reordering, chemical functionalisation with bulky, charged, or multi-functional groups can lead to edge buckling to relieve strain, folding, rolling and even tube formation. We discuss the topological possibilities at a 2D graphene edge, and under what circumstances we expect different edge topologies to occur. Density functional calculations are used to explore in more depth different graphene edge types.

preprint2011arXiv

Behavior of hydrogen ions, atoms, and molecules in alpha-boron studied using density functional calculations

We examine the behaviour of hydrogen ions, atoms and molecules in alpha-boron using density functional calculations. Hydrogen behaves as a negative-U centre, with positive H ions preferring to sit off-center on inter-layer bonds and negative H ions sitting preferably at in-plane sites between three B12 icosahedra. Hydrogen atoms inside B12 icosahedral cages are unstable, drifting off-center and leaving the cage with only a 0.09 eV barrier. While H0 is extremely mobile (diffusion barrier 0.25 eV), H+ and H- have higher diffusion barriers of 0.9 eV. Once mobile these defects will combine, forming H2 in the interstitial void space, which will remain trapped in the lattice until high temperatures. Based on these results we discuss potential differences for hydrogen behaviour in beta-boron, and compare with experimental muon-implantation data.