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Iraj Abbasian Shojaei

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2021arXiv

A Raman Probe of Phonons and Electron-phonon Interactions in NbIrTe4

The semimetal NbIrTe4 has been proposed to be a Type-II Weyl semimetal with 8 pairs of opposite Chirality Weyl nodes which are very close to the Fermi energy. This topological electronic structure is made possible because of the broken inversion symmetry of NbIrTe4 which is an orthorhombic crystal with Td symmetry. Using micro-Raman scattering as a probe, we observe the frequencies and symmetries of 19 phonon modes (ranging from 40 to 260 cm-1) in this material and compare to Density Functional Theory calculations. Using angular and polarization resolved Raman scattering for green (514 nm) and red (633 nm) laser excitation, we show that it is possible to extract the excitation energy dependence of the Raman tensor elements associated with each measurable phonon mode. We show that these tensor elements vary substantially in a small energy range which reflects a strong variation of the electron-phonon coupling for these modes.

preprint2020arXiv

Ultrafast Photoinduced Band Splitting and Carrier Dynamics in Chiral Tellurium Nanosheets

Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures. Detailed time-resolved polarized reflectance spectroscopy is used to investigate its band structure and carrier dynamics. The polarized transient spectra reveal optical transitions between the uppermost spin-split H4 and H5 and the degenerate H6 valence bands (VB) and the lowest degenerate H6 conduction band (CB) as well as a higher energy transition at the L-point. Surprisingly, the degeneracy of the H6 CB (a proposed Weyl node) is lifted and the spin-split VB gap is reduced upon photoexcitation before relaxing to equilibrium as the carriers decay. Using ab initio density functional theory (DFT) calculations we conclude that the dynamic band structure is caused by a photoinduced shear strain in the Te film that breaks the screw symmetry of the crystal. The band-edge anisotropy is also reflected in the hot carrier decay rate, which is a factor of two slower along c-axis than perpendicular to it. The majority of photoexcited carriers near the band-edge are seen to recombine within 30 ps while higher lying transitions observed near 1.2 eV appear to have substantially longer lifetimes, potentially due to contributions of intervalley processes in the recombination rate. These new findings shed light on the strong correlation between photoinduced carriers and electronic structure in anisotropic crystals, which opens a potential pathway for designing novel Te-based devices that take advantage of the topological structures as well as strong spin-related properties.