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Ilya Milekhin

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3 publications

preprint2022arXiv

Deposition of nanosized amino acid functionalized bismuth oxido clusters on gold surfaces

Bismuth compounds are of growing interest with regard to potential applications in catalysis, medicine and electronics, for which their environmentally benign nature is one of the key factors. The most common starting material is bismuth nitrate, which easily hydrolyses to give a large number of condensation products. The so-called bismuth subnitrates are composed of bismuth oxido clusters of varying composition and nuclearity. One reason that hampers the further development of bismuth oxido-based materials, however is the low solubility of the subnitrates, which makes targeted immobilisation on substrates challenging. We present an approach towards solubilisation of bismuth oxido clusters by introducing an amino carboxylate as functional group and a study of the growth mode of these atom-precise nanoclusters on gold surfaces. For this purpose the bismuth oxido cluster [Bi38O45(NO3)20(dmso)28](NO3)4*4dmso (dmso=dimethyl sulfoxide) was reacted with the sodium salt of tert-butyloxycabonyl(Boc)-protected phenylalanine (Phe) to give the soluble and chiral nanocluster [Bi38O45(Boc-Phe)24(dmso)9]. The hydrodynamic diameter of the cluster was estimated with (1.4-1.6) nm (in CH3CN) and (2.2 nm-2.9) nm (in Ethanol) based on dynamic light scattering (DLS). The full exchange of the nitrates by the amino carboxylates was proven by NMR and FTIR as well as elemental analysis (EA) and XPS. The solubility of the bismuth oxido cluster in a protic as well as an aprotic polar organic solvent and the growth mode of the clusters on Au upon spin-, dip-, and drop-coating on gold surfaces were studied. Successful deposition of bismuth oxido cluster was proven by powder XRD, FTIR, and XPS while the microstructure of the resulting films was investigated as a function of the deposition method and the solvent used by SEM, AFM, and optical microscopy.

preprint2022arXiv

Exciton tuning in monolayer WSe2_2 via substrate induced electron doping

We report on large exciton tuning in WSe2_2 monolayers via substrate induced non-degenerate doping. We observe a redshift of ∼\sim62 meV for the AA exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe2_2 is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to the dielectric substrates such as hBN and SiO2_2. As the evidence of doping from HOPG to WSe2_2, a drastic increase of the trion emission intensity was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe2_2/HOPG, WSe2_2/hBN, and WSe2_2/graphene, we conclude that this unique excitonic behavior is induced by electron doping from the substrate. Our results propose a simple yet efficient way for exciton tuning in monolayer WSe2_2, which plays a central role in the fundamental understanding and further device development.

preprint2022arXiv

Traps and transport resistance: the next frontier for stable state-of-the-art non-fullerene acceptor solar cells

Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits open-circuit voltage and lowers charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

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