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Researcher profile

Ilya Kostanovskiy

Ilya Kostanovskiy contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2020arXiv

Doping-induced spin Hall ratio enhancement in A15-phase, Ta-doped Beta-W thin films

As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with Co2Fe6B2 were nearly twice as large as the SHRs in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt free, spintronic devices.

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preprint2019arXiv

Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films

Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled doping to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.

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