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Researcher profile

Igor Kaganovich

Igor Kaganovich contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.plasm-phcond-mat.softphysics.app-ph

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Published work

6 published item(s)

preprint2026arXiv

Partially Ionized Plasma Physics and Technological Applications

Partially ionized plasma physics has attracted a lot of attention recently due to numerous technological applications made possible by the increased sophistication of computer modelling, the depth of the theoretical analysis, and the technological applications to a vast field of the manufacturing for computer components. The partially ionized plasma is characterized by a significant presence of neutral particles in contrast to fully ionized plasma. The theoretical analysis is based upon solutions of the kinetic Boltzmann equation yielding the non-Maxwellian electron energy distribution function (EEDF) thereby emphasizing the difference with a fully ionized plasma. The impact of the effect on discharges in inert and molecular gases is described in detail yielding the complex nonlinear phenomena in plasma self-organization. A few examples of such phenomena are given including the non-monotonic EEDFs in the discharge afterglow in mixture of argon with the molecular gas NF3; the explosive generation of cold electron populations in capacitive discharges, hysteresis of EEDF in inductively coupled plasmas. Recently, highly advanced computer codes were developed in order to address the outstanding problems of plasma technology. These developments are briefly described in general terms.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Investigating the effects of electron bounce-cyclotron resonance on plasma dynamics in capacitive discharges operated in the presence of a weak transverse magnetic field

Recently, S Patil et al. have reported the existence of an enhanced operating regime when a low-pressure (5 mTorr) capacitively coupled discharge (CCP) is driven by a very high radio-frequency (60 MHz) source in the presence of a weak external magnetic field applied parallel to its electrodes. Their Particle-in-Cell (PIC) simulations show, that a significantly higher bulk plasma density and ion flux can be achieved at the electrode when the electron cyclotron frequency equals half of the applied RF frequency for a given fixed voltage. In the present work we take a detailed look at this phenomenon and further delineate the effect of this "electron bounce cyclotron resonance (EBCR)" on the electron and ion dynamics of the system. We find that the ionization collision rate and stochastic heating is maximum under resonance condition. The electron energy distribution function also indicates that the population of tail end electrons is highest for the case where EBCR is maximum. Formation of electric field transients in the bulk plasma region are also seen at lower values of applied magnetic field. Finally, we demonstrate that the EBCR induced effect is a low pressure phenomenon and weakens as the neutral gas pressure increases. The potential utility of this effect to advance the operational performance of CCP devices for industrial purposes is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Atomic Precision Processing of New Materials for Frontier Microelectronic Applications in High Performance Computing and Artificial Intelligence

This document is a joint response by scientists from the Princeton Plasma Physics Laboratory, IBM T. J. Watson Research Center and Applied Materials, Inc. to the DOE Office of Science (DOE-SC) Request for Information: Basic Research Initiative for Microelectronics (https://www.federalregister.gov/documents/2019/07/12/2019-14869/request-for-information-basic-research-initiative-for-microelectronics). Specifically, we propose DOE-SC to include the following topics in their consideration for future solicitations on Microelectronics: 1) The development of a real-time monitoring and in-situ diagnostic techniques that can provide information on plasma, substrate surface, and interaction between both during atomic precision processing of complex materials for the most advanced microelectronic devices with applications to high performance computing and artificial intelligence, and 2) The development of experimentally validated modeling tools to predict processing dynamics including plasma, chemical and material processes involved.

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preprint2020arXiv

Convenient analytical formula for cluster mean diameter and diameter dispersion after nucleation burst

We propose a new method of estimating the mean diameter and dispersion of clusters formed in a cooling gas, right after the nucleation stage. Using a moment model developed by Friedlander [S.K. Friedlander, Ann. N.Y. Acad. Sci. 354 (1983)], we derive an analytic relationship for both cluster diameter and diameter dispersion as a function of two of the characteristic times of the system - the cooling time and primary constituents collision time. These formulas can be used to predict diameter and dispersion variation with process parameters such as the initial monomer pressure or cooling rate. It is also possible to use them as an input to the coagulation stage, without the need to compute complex cluster generation during the nucleation burst. We compared our results with a nodal code and got excellent agreement.

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preprint2020arXiv

Critical Need for a National Initiative in Low Temperature Plasma Research

In the white paper we describe a national program in Low Temperature Plasma (LTP). The program should take advantage of the research opportunities of 3 rapidly growing areas (nanomaterial plasma synthesis, plasma medicine, microelectronics). The main theme is to achieve a fundamental understanding of Low Temperature Plasmas as they are applied to these different applications. This understanding will allow U.S. industry to meet the challenges of international competition.

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preprint2020arXiv

Self-acceleration and energy channeling in the saturation of the ion-sound instability in a bounded plasma

A novel regime of the saturation of the Pierce-type ion-sound instability in bounded ion-beam-plasma system is revealed in 1D PIC simulations. It is found that the saturation of the instability is mediated by the oscillating virtual anode potential structure. The periodically oscillating potential barrier separates the incoming beam ions into two groups. One component forms a supersonic beam which is accelerated to an energy exceeding the energy of the initial cold ion beam. The other component is organized as a self-consistent phase space structure of trapped ions with a wide energy spread - the ion hole. The effective temperature (energy spread) of the ions trapped in the hole is lower than the initial beam energy. In the final stage the ion hole expands over the whole system length.

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