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Researcher profile

Ian D. Sharp

Ian D. Sharp contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phphysics.chem-phquant-ph

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Published work

5 published item(s)

preprint2022arXiv

Using metal-organic frameworks to confine liquid samples for nanoscale NV-NMR

Atomic-scale magnetic field sensors based on nitrogen vacancy (NV) defects in diamonds are an exciting platform for nanoscale nuclear magnetic resonance (NMR) spectroscopy. The detection of NMR signals from a few zeptoliters to single molecules or even single nuclear spins has been demonstrated using NV-centers close to the diamond surface. However, fast molecular diffusion of sample molecules in and out of nanoscale detection volumes impedes their detection and limits current experiments to solid-state or highly viscous samples. Here, we show that restricting diffusion by confinement enables nanoscale NMR spectroscopy of liquid samples. Our approach uses metal-organic frameworks (MOF) with angstrom-sized pores on a diamond chip to trap sample molecules near the NV-centers. This enables the detection of NMR signals from a liquid sample, which would not be detectable without confinement. These results set the route for nanoscale liquid-phase NMR with high spectral resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN

Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the chemical reactions during ALD provides excellent control over the layer thickness. However, in contrast to idealized growth models, it is experimentally challenging to create continuous monolayers by ALD because surface inhomogeneities and precursor steric interactions result in island growth during film nucleation. Thus, the ability to create pin-hole free monolayers by ALD would offer new opportunities for controlling interfacial charge and mass transport in semiconductor devices, as well as for tailoring surface chemistry. Here, we report full encapsulation of c-plane gallium nitride (GaN) with an ultimately thin (~3 Å) aluminum oxide (AlOx) monolayer, which is enabled by the partial conversion of the GaN surface oxide into AlOx using a combination of trimethylaluminum deposition and hydrogen plasma exposure. Introduction of monolayer AlOx significantly modifies the physical and chemical properties of the surface, decreasing the work function and introducing new chemical reactivity to the GaN surface. This tunable interfacial chemistry is highlighted by the reactivity of the modified surface with phosphonic acids under standard conditions, which results in self-assembled monolayers with densities approaching the theoretical limit. More broadly, the presented monolayer AlOx deposition scheme can be extended to other dielectrics and III-V-based semiconductors, with significant relevance for applications in optoelectronics, chemical sensing, and (photo)electrocatalysis.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Scalable transparent conductive thin films with electronically passive interfaces for direct chemical vapor deposition of 2D materials

We present a novel transparent conductive support structure for two-dimensional (2D) materials that provides an electronically passive 2D/3D interface while also enabling facile interfacial charge transport. This structure, which comprises an evaporated nanocrystalline carbon (nc-C) film beneath an atomic layer deposited alumina (ALD AlOx) layer, is thermally stable and allows direct chemical vapor deposition (CVD) of 2D materials onto the surface. When the nc-C/AlOx is deposited onto a 270 nm SiO2 layer on Si, strong optical contrast for monolayer flakes is retained. Raman spectroscopy reveals good crystal quality for MoS2 and we observe a ten-fold photoluminescence intensity enhancement compared to flakes on conventional Si/SiO2. Tunneling across the ultrathin AlOx enables interfacial charge injection, which we demonstrate by artifact-free scanning electron microscopy and photoemission electron microscopy. Thus, this combination of scalable fabrication and electronic conductivity across a weakly interacting 2D/3D interface opens up new application and characterization opportunities for 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Surface NMR using quantum sensors in diamond

Characterization of the molecular properties of surfaces under ambient or chemically reactive conditions is a fundamental scientific challenge. Moreover, many traditional analytical techniques used for probing surfaces often lack dynamic or molecular selectivity, which limits their applicability for mechanistic and kinetic studies under realistic chemical conditions. Nuclear magnetic resonance spectroscopy (NMR) is a widely used technique and would be ideal for probing interfaces due to the molecular information it provides noninvasively. However, it lacks the sensitivity to probe the small number of spins at surfaces. Here, we use nitrogen vacancy (NV) centers in diamond as quantum sensors to optically detect nuclear magnetic resonance signals from chemically modified aluminum oxide surfaces, prepared with atomic layer deposition (ALD). With the surface NV-NMR technique, we are able to monitor in real-time the formation kinetics of a self assembled monolayer (SAM) based on phosphonate anchoring chemistry to the surface. This demonstrates the capability of quantum sensors as a new surface-sensitive tool with sub-monolayer sensitivity for in-situ NMR analysis with the additional advantage of a strongly reduced technical complexity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

High-Transconductance Graphene Solution-Gated Field Effect Transistors

In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.

0 citations0 reviewsNo code linkedOpen access