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I. -M. Imort

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2 publications

preprint2011arXiv

Anomalous Hall effect in the Co-based Heusler compounds Co2_{2}FeSi and Co2_{2}FeAl

The anomalous Hall effect (AHE) in the Heusler compounds Co2_{2}FeSi and Co2_{2}FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity ρxxρ_{xx} as well as the anomalous Hall resistivity ρaheρ_{ahe}. Analyzing the scaling behavior of ρaheρ_{ahe} in terms of ρxxρ_{xx} points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds.

preprint2011arXiv

Scaling behavior of the spin pumping effect in ferromagnet/platinum bilayers

We systematically measured the DC voltage V_ISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet/platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V_ISH invariably has the same polarity. V_ISH furthermore scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism or type. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

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