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Researcher profile

I. Borzenets

I. Borzenets contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-con

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Published work

2 published item(s)

preprint2020arXiv

Overdamped Phase Diffusion in hBN Encapsulated Graphene Josephson Junctions

We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7K, the junctions appear non-hysteretic with respect to the switching and retrapping currents $I_C$ and $I_R$. A small non-zero resistance is observed even around zero bias current, and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.

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preprint2010arXiv

Resonant Tunneling in a Dissipative Environment

We measure tunneling through a single quantum level in a carbon nanotube quantum dot connected to resistive metal leads. For the electrons tunneling to/from the nanotube, the leads serve as a dissipative environment, which suppresses the tunneling rate. In the regime of sequential tunneling, the height of the single-electron conductance peaks increases as the temperature is lowered, although it scales more weekly than the conventional 1/T. In the resonant tunneling regime (temperature smaller than the level width), the peak width approaches saturation, while the peak height starts to decrease. Overall, the peak height shows a non-monotonic temperature dependence. We associate this unusual behavior with the transition from the sequential to the resonant tunneling through a single quantum level in a dissipative environment.

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