Researcher profile

I. Adlakha

I. Adlakha contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Critical assessment of hydrogen effects on the slip transmission across grain boundaries in α-Fe

Grain boundaries (GBs) play a fundamental role in the strengthening mechanism of crystalline structures by acting as an impediment to dislocation motion. However, the presence of an aggressive environment such as hydrogen increases the susceptibility to intergranular fracture. Further, there is a lack of systematic investigations exploring the role of hydrogen on the dislocation-grain-boundary (DGB) interactions. Thus, in this work, the effect of hydrogen on the interactions between a screw dislocation and <111> tilt GBs in α-Fe were examined. Our simulations reveal that the outcome of the DGB interaction strongly depends on the underlying GB dislocation network. Further, there exists a strong correlation between the GB energy and the energy barrier for slip transmission. In other words, GBs with lower interfacial energy demonstrate a higher barrier for slip transmission. The introduction of hydrogen along the GB causes the energy barrier for slip transmission to increase consistently for all of the GBs examined. The energy balance for a crack initiation in the presence of hydrogen was examined with the help of our observations and previous findings. It was found that the presence of hydrogen increases the strain energy stored within the GB which could lead to a transgranular-to-intergranular fracture mode transition.

preprint2013arXiv

Atomic scale investigation of grain boundary structure role on deformation and crack growth dynamics in Aluminum

The role that grain boundary (GB) structure plays on the plasticity of interfaces with preexisting cracks and on the interface crack dynamics was investigated using MD for both <100> and <110> aluminum STGBs. In simulations with a crack at the interface, this research shows how the maximum normal strength of the interface correlates with the respective GB energy, the GB misorientation, and the GB structural description. For instance, the normal interface strength for GBs containing D structural unit (SU) or stacking faults in the GB structural description (Σ13 (510) θ=22.6° and Σ97 (940) θ=47.9°) shows a noticeable decrease in interface strength, as compared to other evaluated <100> GBs that contained favored SUs. In the case of <110> interfaces, the presence of the E SU in the GB structure lowers the maximum normal interface strength by 35%. Further investigation of the deformation at the crack tip in GBs containing the E structure revealed that the E SU underwent atomic shuffling to accommodate intrinsic stacking faults (ISFs) along the interface, which in turn acts as a site for partial dislocation nucleation. Interestingly, regardless of GB misorientation, GB interfaces examined here containing the E structure in their structural period exhibited relatively small variation in maximum normal strength of interface. The GB volume ahead of the crack tip underwent structural rearrangement which, in turn, influenced the crack propagation mechanism. In most GBs, the crack propagation was due to alternating mechanisms of dislocation emission, followed by propagation of dislocation (blunting) and cleavage/crack advance. Moreover, the crack growth rates along the GB interface were strongly influenced by the initial free volume at the interface, i.e., faster crack growth was observed along interfaces with higher initial free volume.