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Hyeon Han

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

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preprint2026arXiv

Interferometric evidence of non-volatile anomalous phase shifts in exchange-spin-split Josephson supercurrent diodes

The recent realization of zero-field, polarity-reversible supercurrent rectification in proximity-magnetized Rashba-type Pt Josephson junctions (JJs) enables the development of superconducting logic circuits and cryogenic memory applications. Here, we demonstrate a non-volatile anomalous phase shift ϕ_0 directly probed via superconducting quantum interferometry, providing phase-sensitive evidence of spontaneous time-reversal symmetry breaking in these Rashba-type systems. By replacing the Pt barrier with 5d or 4d element layers exhibiting different (para-)magnetic susceptibilities, spin-orbit coupling strengths, and electronic band structures, we elucidate the role of proximity effects in governing zero-field diode behavior. Ta (W) JJs exhibit zero-field diode efficiencies of ~17% (~5%) at 2 K, which are slightly (significantly) lower than those of Pt JJs. Notably, the diode polarity in Ta and W JJs is reversed relative to Pt JJs. Combined with the large zero-field diode efficiency (~15% at 2 K) observed in highly magnetic-susceptible Pd JJs, these results show that non-volatile ϕ_0 and, consequently, zero-field diode performance can be tuned through proximity engineering of interfacial magnetic ordering and Rashba spin-orbit interaction.

preprint2019arXiv

Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films

Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled doping to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.