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Hu Zhao

Hu Zhao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2016arXiv

Method for identifying electromagnetically induced transparency in a tunable circuit quantum electrodynamics system

Electromagnetically induced transparency (EIT) has been realized in atomic systems, but fulfilling the EIT conditions for artificial atoms made from superconducting circuits is a more difficult task. Here we report an experimental observation of the EIT in a tunable three-dimensional transmon by probing the cavity transmission. To fulfill the EIT conditions, we tune the transmon to adjust its damping rates by utilizing the effect of the cavity on the transmon states. From the experimental observations, we clearly identify the EIT and Autler-Townes splitting (ATS) regimes as well as the transition regime in between. Also, the experimental data demonstrate that the threshold $Ω_{\rm AIC}$ determined by the Akaike information criterion can describe the EIT-ATS transition better than the threshold $Ω_{\rm EIT}$ given by the EIT theory.

preprint2013arXiv

Charge-SQUID and Tunable Phase-slip Flux Qubit

A phase-slip flux qubit, exactly dual to a charge qubit, is composed of a superconducting loop interrupted by a phase-slip junction. Here we propose a tunable phase-slip flux qubit by replacing the phase-slip junction with a charge-related superconducting quantum interference device (SQUID) consisting of two phase-slip junctions connected in series with a superconducting island. This charge-SQUID acts as an effective phase-slip junction controlled by the applied gate voltage and can be used to tune the energy-level splitting of the qubit. Also, we show that a large inductance inserted in the loop can reduce the inductance energy and consequently suppress the dominating flux noise of the phase-slip flux qubit. This enhanced phase-slip flux qubit is exactly dual to a transmon qubit.

preprint2005arXiv

Interaction of a surface acoustic wave with a two-dimensional electron gas

When a surface acoustic wave propagates on the surface of a GaAs semiconductor, coupling between electrons in the two-dimensional electron gas beneath the interface and the elastic host crystal through piezoelectric interaction will attenuate the SAW. The coupling coefficient is calculated for the SAW propagating along an arbitrary direction. It is found that the coupling strength is largely dependent on the propagating direction. When the SAW propagates along the [011] direction, the coupling becomes quite weak.