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Researcher profile

Hosik Lee

Hosik Lee contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
Computation and Languagecond-mat.mes-hallcond-mat.mtrl-scieess.ASSound

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Published work

2 published item(s)

preprint2021arXiv

Adaptable Multi-Domain Language Model for Transformer ASR

We propose an adapter based multi-domain Transformer based language model (LM) for Transformer ASR. The model consists of a big size common LM and small size adapters. The model can perform multi-domain adaptation with only the small size adapters and its related layers. The proposed model can reuse the full fine-tuned LM which is fine-tuned using all layers of an original model. The proposed LM can be expanded to new domains by adding about 2% of parameters for a first domain and 13% parameters for after second domain. The proposed model is also effective in reducing the model maintenance cost because it is possible to omit the costly and time-consuming common LM pre-training process. Using proposed adapter based approach, we observed that a general LM with adapter can outperform a dedicated music domain LM in terms of word error rate (WER).

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Harnessing the giant out-of-plane Rashba effect and the nanoscale persistent spin helix via ferroelectricity in SnTe thin films

A non-vanishing electric field inside a non-centrosymmetric bulk crystal transforms into a momentum- dependent magnetic field, namely, a spin-orbit field (SOF). SOFs are of great use in spintronics because they enable spin manipulation via the electric field. At the same time, however, spintronic applications are severely limited by the SOF, as electrons traversing the SOF easily lose their spin information. Here, we propose that in-plane ferroelectricity in (001)-oriented SnTe thin films harness the Janus-faced SOF in a reconcilable way to enable electrical spin controllability and suppress spin dephasing. The in-plane ferroelectricity produces a unidirectional out-of-plane Rashba SOF that can host a long-lived helical spin mode known as a persistent spin helix (PSH). Through direct coupling between the inversion asymmetry and the SOF, the ferroelectric switching reverses the out-of-plane Rashba SOF, giving rise to a maximally field-tunable PSH. Furthermore, the giant out- of-plane Rashba SOF seen in the SnTe thin films is linked to the nano-sized PSH, potentially reducing spintronic device sizes to the nanoscale. We combine the two ferroelectric-coupled degrees of freedom, longitudinal charge and transverse PSH, to design intersectional electro-spintronic transistors governed by non-volatile ferroelectric switching within nanoscale lateral and atomic-thick vertical dimensions.

0 citations0 reviewsNo code linkedOpen access