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Researcher profile

Holger T. Grahn

Holger T. Grahn contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2021arXiv

Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion

We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are recorded for temperatures between 10 and 300 K. A classical diffusion model accounts for the profiles acquired between 120 and 300 K, while for temperatures lower than 120 K, a quantum capture process has to be taken into account in addition. Combining the diffusion length extracted from these profiles and the effective carrier lifetime measured by time-resolved photoluminescence experiments, we deduce the carrier diffusivity as a function of temperature. The experimental values are found to be close to theoretical ones for the ambipolar diffusivity of free carriers limited only by intrinsic phonon scattering. This agreement is shown to be fortuitous. The high diffusivity at low temperatures instead originates from an increasing participation of excitons in the diffusion process.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Strong Al segregation in the shell of the nanowires leads to the formation of Ga-rich inclusions acting as quantum dots. At 10 K, intense light emission associated with these shell quantum dots is observed. The average radiative lifetime of excitons confined in the shell quantum dots is 1.7 ns. We show that excitons may tunnel toward adjacent shell quantum dots and nonradiative point defects. We investigate the changes in the dynamics of charge carriers in the shell with increasing temperature, with particular emphasis on the transfer of carriers from the shell to the core of the nanowires. We finally discuss the implications of carrier localization in the (Al,Ga)As shell for fundamental studies and optoelectronic applications based on core-shell III-As nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of short ones. Cathodoluminescence intensity maps reveal the 3.45-eV band to originate primarily from the long nanowires. Transmission electron microscopy shows that these long nanowires are either Ga polar and are joined by an inversion domain boundary with their short N-polar neighbors, or exhibit a Ga-polar core surrounded by a N-polar shell with a tubular inversion domain boundary at the core/shell interface. For samples grown at high temperatures, which exhibit a uniform nanowire morphology, the 3.45-eV band is also found to originate from particular nanowires in the ensemble and thus presumably from inversion domain boundaries stemming from the coexistence of N- and Ga-polar nanowires. For several of the investigated samples, the 3.45-eV band splits into a doublet. We demonstrate that the higher-energy component of this doublet arises from the recombination of two-dimensional excitons free to move in the plane of the inversion domain boundary. In contrast, the lower-energy component of the doublet originates from excitons localized in the plane of the inversion domain boundary. We propose that this in-plane localization is due to shallow donors in the vicinity of the inversion domain boundaries.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires

We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both continuous-wave and pulsed excitation. The exciton recombination in the present GaN nanowires is dominated by a nonradiative channel between 10 and 300 K. Furthermore, bound and free excitons in GaN NWs are strongly coupled even at low temperatures resulting in a common lifetime of these states. By solving the rate equations for a coupled two-level system, we show that one cannot, in practice, distinguish whether the nonradiative decay occurs directly via the bound or indirectly via the free state. The nanowire surface and coalescence-induced dislocations appear to be the most obvious candidates for nonradiative defects, and we thus compare the exciton decay times measured for a variety of GaN nanowire ensembles with different surface-to-volume ratio and coalescence degrees. The data are found to exhibit no correlation with either of these parameters, i. e., the dominating nonradiative channel in the GaN nanowires under investigation is neither related to the nanowire surface, nor to coalescence-induced defects for the present samples. Hence, we conclude that nonradiative point defects are the origin of the fast recombination dynamics of excitons in GaN nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Luminescence associated with stacking faults in GaN

Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should be transferable also to other wurtzite semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires

Using time-resolved photoluminescence spectroscopy, we explore the transient behavior of bound and free excitons in GaN nanowire ensembles. We investigate samples with distinct diameter distributions and show that the pronounced biexponential decay of the donor-bound exciton observed in each case is not caused by the nanowire surface. At long times, the individual exciton transitions decay with a common lifetime, which suggests a strong coupling between the corresponding exciton states. A system of non-linear rate-equations taking into account this coupling directly reproduces the experimentally observed biexponential decay.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

The strain state and composition of a 400 nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray diffraction and cathodoluminescence (CL) spectroscopy as well as by spatially resolved CL and energy dispersive x-ray analysis. The CL investigations confirm a process of strain relaxation accompanied by an increasing indium content toward the surface of the (In,Ga)N layer, which is known as the compositional pulling effect. Moreover, we identify the strained bottom, unstrained top, and gradually relaxed intermediate region of the (In,Ga)N layer. In addition to an increase of the indium content along the growth direction, the strain relaxation leads to an enhancement of the lateral variations of the indium distribution toward the surface.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

We analyze the emission of single GaN nanowires with (In,Ga)N insertions using both micro-photoluminescence and cathodoluminescence spectroscopy. The emission spectra are dominated by a green luminescence band that is strongly blueshifted with increasing excitation density. In conjunction with finite-element simulations of the structure to obtain the piezoelectric polarization, these results demonstrate that our (In,Ga)N/GaN nanowire heterostructures are subject to the quantum-confined Stark effect. Additional sharp peaks in the spectra, which do not shift with excitation density, are attributed to emission from localized states created by compositional fluctuations in the ternary (In,Ga)N alloy.

0 citations0 reviewsNo code linkedOpen access